High-Quality Low-Dose SIMOX Wafers (Special Issue on SOI Devices and Their Process Technologies)

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概要

• 論文の詳細を見る

• This paper reviews the structure and electrical properties of high-quality Internal Thermal OXidation (ITOX)-processed low-dose Separation by IMplanted OXygen (SIMOX) wafers. The ITOX SIMOX process consists of three steps: low-dose oxygen implantation, high-temperature annealing, and high-temperature oxidation. The low dose makes possible a high-throughput production of SIMOX wafers. The high-temperature annealing provides a continuous buried oxide layer and reduces the dislocation density in the top silicon layer. The subsequent high-temperature oxidation thickens the buried oxide layer without any additional oxygen implantation, thus improving its electrical properties. The ITOX mechanism is also described. It is concluded that the ITOX SIMOX wafers are very useful for fabricating ULSIs.

• 社団法人電子情報通信学会の論文
• 1997-03-25

著者

• Nakashima Sadao

  Ntt System Electronics Laboratories

関連論文

• High-Quality Low-Dose SIMOX Wafers (Special Issue on SOI Devices and Their Process Technologies)

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