Suppression of Parasitic Bipolar Action and Improvement of Hot-Carrier Reliability in Fully-Depleted Metal-Oxide-Semiconductor Field Effect Transistors on SIMOX (Separation by IMplanted Oxygen) Introducing Recombination Centers near Source Junction

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1997-10-15

著者

• TSUCHIYA Toshiaki

  NTT Service Integration Laboratories

• Ohno Terukazu

  Ntt System Electronics Laboratories

• Tazawa Satoshi

  Ntt System Electronics Laboratories

• TOMIZAWA Masaaki

  NTT System Electronics Laboratories

• Tsuchiya Toshiaki

  Ntt System Electronics Laboratories

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• Suppression of Parasitic Bipolar Action and Improvement of Hot-Carrier Reliability in Fully-Depleted Metal-Oxide-Semiconductor Field Effect Transistors on SIMOX (Separation by IMplanted Oxygen) Introducing Recombination Centers near Source Juncti

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