TSUCHIYA Toshiaki | NTT Service Integration Laboratories
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概要
関連著者
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TSUCHIYA Toshiaki
NTT Service Integration Laboratories
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Ohno Terukazu
Ntt System Electronics Laboratories
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Tazawa Satoshi
Ntt System Electronics Laboratories
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SAITO Hiroshi
NTT Network Innovation Laboratories, NTT Corporation
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TOMIZAWA Masaaki
NTT System Electronics Laboratories
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佐藤 大輔
NTTアドバンステクノロジ(株)
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SATOH Daisuke
NTT Service Integration Laboratories
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SAITO Hiroshi
NTT Service Integration Laboratories
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MAROSI Gyula
Technical University of Budapest, Hungary
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HORVATH Gyorgy
Technical University of Budapest, Hungary
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TATAI Peter
Technical University of Budapest, Hungary
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ASANO Shoichiro
NII(National Institute of Informatics)
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Tatai Peter
Technical University Of Budapest Hungary
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Marosi Gyula
Technical University Of Budapest Hungary
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Saito H
Ntt Corp. Musashino‐shi Jpn
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Horvath Gyorgy
Technical University Of Budapest Hungary
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Tsuchiya Toshiaki
Ntt System Electronics Laboratories
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Tsuchiya Toshiaki
Ntt Service Integration Laboratories Ntt Corporation
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Tsuchiya Toshiaki
Serv. Integration Laboratories Ntt Corp.
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Ohno Terukazu
NTT System Electronics Laboratories, 3-1, Morinosato Wakamiya, Atsugi, Kanagawa 243-01, Japan
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Tazawa Satoshi
NTT System Electronics Laboratories, 3-1, Morinosato Wakamiya, Atsugi, Kanagawa 243-01, Japan
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Tomizawa Masaaki
NTT System Electronics Laboratories, 3-1, Morinosato Wakamiya, Atsugi, Kanagawa 243-01, Japan
著作論文
- Real-Time Cell Arrival Sequence Estimation and Simulation for IP-over-ATM Networks
- Suppression of Parasitic Bipolar Action and Improvement of Hot-Carrier Reliability in Fully-Depleted Metal-Oxide-Semiconductor Field Effect Transistors on SIMOX (Separation by IMplanted Oxygen) Introducing Recombination Centers near Source Junction
- Impact of Protocols and Network Configuration on Node-Level Availability in Sensor Networks(Network, Ubiquitous Networks)
- Usage of Network-Level Dynamic Priority and Its Comparison with Static Priority(Network)
- Call Admission Control with QoS Class Modification
- Suppression of Parasitic Bipolar Action and Improvement of Hot-Carrier Reliability in Fully-Depleted Metal-Oxide-Semiconductor Field Effect Transistors on SIMOX (Separation by IMplanted Oxygen) Introducing Recombination Centers near Source Juncti