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NTT LSI laboratories | 論文
- Effect of Silicon Addition on Electrical Properties of SrBi_2Ta_2O_9 Thin Films
- A Partial-Ground-Plane (PGP) Silicon-on-Insulator (SOI) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) for Deep Sub-0.1μm Channel Regime
- Proposal of a Partial-Ground-Plane (PGP) Silicon-on-Insulator (SOI) MOSFET for Deep sub-0.1-μm Channel Regime
- Proposal of a Partial-Ground-Plane(PGP) Silicon-on-Insulator(SOI) MOSFET for Deep Sub-100-nm Channel Regime
- Physical and Mathematical Basis for the Crucial Technical Shortcoming of the Split C-V Technique in Thin-SOI MOSFET's
- Influence of Minority Hole Injection on Current Gain Characteristics in AlGaAs/GaAs Heterojunction Bipolar Transistors
- Fabrication of Small AlGaAs/GaAs HBT's for Integrated Circuits Using New Bridged Base Electrode Technology
- Extrinsic Base Surface Recombination Current in Surface-Passivated InGaP/GaAs Heterojunction Bipolar Transistors
- Passivation of P-Type Dopants in GaAs by Process Induced Hydrogenation and Reactivation by Thermal Annealing
- Current-Induced Degradation of AlGaAs/GaAs Heterojunction Bipolar Transistors and Its Suppression by Thermal Annealing in As Overpressure
- Surface Damage of Reactive Ion Beam Etched GaAs
- Suppression of Emitter Size Effecton Current Gainin AlGaAs/GaAs HBTs
- Emitter-Base Junction Size Effect on Current Gain H_ of AlGaAs/GaAs Heterojunction Bipolar Transistors
- Effect of Mechanical Vibration on Patterning Characteristics in Synchrotron Radiation Lithography
- Overlay Repeatability in Mix-and-Match Exposure Using the SR Stepper: SS-1
- X-Ray Projection Lithography Using a Fresnel Zone Plate
- Atomic Layer Epitaxy of GaAs Using GaCl_3 and AsH_3
- Vapor Phase Epitaxy of AlGaAs by Direct Reacion between AlCl_2, GaCl_3 and AsH_3/H_2
- Growth Properties of Al_xGa_As Grown by MOVPE Using TEG and TMA
- A 1-V MTCMOS Circuit Hardened to Temperature-Dependent Delay-Time Variation