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Microelectronics Research Centre, Cavendish Laboratory, University of Cambridge | 論文
- Fabrication of Free-Standing Single-Crystal Silicon Nanostructures for the Study of Thermal Transport and Defect Scattering in Low Dimensional Systems
- Characterization of Tunnel Barriers in Polycrystalline Silicon Point-Contact Single-Electron Transistors
- Carrier Transport across a Few Grain Boundaries in Highly Doped Polycrystalline Silicon : Electrical Properties of Condensed Matter
- UHV-STM Study of Electron Emission from Individual Silicon Nanopillars
- Single Electron Charging Phenomena in Silicon Nano-Pillars With and Without Silicon Nitride Tunnel Barriers
- Application of Focused Ion Beam Implantation to Produce Gallium Arsenide Metal Semiconductor Field-Effect Transistors with a Novel Doping Profile
- Lateral p-n Junction in Modulation Doped AlGaAs/GaAs
- Dithiol-Linked Gold Colloidal Particles Used for Fabricating Single Electron Transistors
- Temperature dependence of Space Charge Limited Current (SCLC) in thin films of silicon nanocrystals
- Transport Properties of Two Quantum Dots Connected in Series Formed in Silicon Inversion Layers
- Fabrication of Lateral Tunnel Junctions and Measurement of Coulomb Blockade Effects
- Performance of Silicon Based bi-directional Electron Pumps Consisting of Two Coulomb Blockade Devices
- Tunnel Barrier Formation in Silicon Nanowires
- Characteristics of Electron Pump Circuits Using Silicon Multiple Tunnel Junctions
- Characteristic of Electron Pumps Based on Silicon Coulomb Blockade Devices
- Performance of Silicon Based Bi-Directional Electron Pumps Consisting of Two Coulomb Blockade Devices
- Optimisation of Tunnel Barriers for nc-Si Single-Electron Transistors
- Structural and Electrical Characterization of Nanocrystalline Silicon (nc-Si) Single Electron Transistors
- Fabrication of Free-Standing Single-Crystal Silicon Nanostructures for the Study of Thermal Transport and Defect scattering in Low Dimensional Systems : Microfabrication and Physics
- GaAs MISFET Based Memory with a Nanocomposite Gate