Lateral p-n Junction in Modulation Doped AlGaAs/GaAs

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概要

• 論文の詳細を見る

• Lateral p-n junctions have advantages for monolithic integration with other electronic devices and can improve the modulation bandwidth of light emitting devices. An alternative approach to existing fabrication methods is presented. Simulations show that reconibination takes place inside the undoped channel and that the lateral position of the junction can be defined via etching. In order to demonstrate the concept, a simple device was fabricated and characterized. [DOI: 10.1143/JJAP.41.2513]

• 社団法人応用物理学会の論文
• 2002-04-30

著者

• Hasko David

  Microelectronics Research Centre Cavendish Laboratory University Of Cambridge:hitachi Cambridge Labo

• Hasko David

  Microelectronics Research Centre Cavendish Laboratory University Of Cambridge

• KAESTNER Bernd

  Microelectronics Research Centre, Cavendish Laboratory, University of Cambridge

• WILLIAMS David

  Microelectronics Research Centre, Cavendish Laboratory, University of Cambridge

• Kaestner Bernd

  Microelectronics Research Centre Cavendish Laboratory University Of Cambridge:hitachi Cambridge Labo

• Williams David

  Microelectronics Research Centre Cavendish Laboratory University Of Cambridge:hitachi Cambridge Labo

関連論文

• Lateral p-n Junction in Modulation Doped AlGaAs/GaAs
• Reduction in Roughness of Resist Features in PMMA due to the Absence of a Rinse

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