Reduction in Roughness of Resist Features in PMMA due to the Absence of a Rinse

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概要

• 論文の詳細を見る

• The effect of a non solvent rinse (IPA) on the surface roughness of electron-beam-exposed PMMA is investigated by atomic force microscopy (AFM). The roughness behaviour of PMMA developed using $1:3$ $\text{MIBK}:\text{IPA}$ with IPA rinsing is similar to that of the case without IPA rinsing; however, the RMS roughness is reduced by about two-thirds by omitting the non solvent rinse. Also, for exposures above the nominal dose and developed using $1:3$ $\text{MIBK}:\text{IPA}$ with IPA rinsing, some resist residue is found, leading to additional roughness. In the case without IPA rinsing, no residue is found. This behaviour is attributed to polymer phase separation during the development and rinse steps of the process.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-10-15

著者

• Hasko David

  Microelectronics Research Centre Cavendish Laboratory University Of Cambridge:hitachi Cambridge Labo

• Hasko David

  Microelectronics Research Centre Cavendish Laboratory University Of Cambridge

• Yasin Shazia

  Microelectronics Research Centre Cavendish Laboratory University Of Cambridge

• Khalid Mohammad

  Hitachi Cambridge Laboratory, Madingley Road, Cambridge CB3 0HE, U.K.

• Khalid Mohammad

  Hitachi Cambridge Laboratory

関連論文

• Lateral p-n Junction in Modulation Doped AlGaAs/GaAs
• Reduction in Roughness of Resist Features in PMMA due to the Absence of a Rinse

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