スポンサーリンク
Micro-electronics Laboratory Electronics And Telecommunications Research Institute | 論文
- Etching Behavior and Damage Recovery of SrBi_2Ta_2O_9 Thin Films
- The Etching Behaviors of Pt/SrBi_2Ta_2O_9/NO/Si Structure for MFIS in NDRO-Type FRAM
- The Etching Behaviors of Pt/SrBi_2Ta_2O_9/NO/Si Structure for MFIS in NDRO-Type FRAM
- The Etching Behaviors of Pt/SrBi_2Ta_2O_9/NO/Si Structure for MFIS in NDRO-Type FRAM
- Electrical Properties of SrBi_2Ta_2O_9/Insulator/Si Structures with Various Insulators
- Formation of Ferroelectric Thin Films for MFIS or MFMIS Structure
- Formation of Ferroelectric Thin Films for MFIS or MFMIS Structure
- Nanoscale Observations on the Degradation Phenomena of Phase-Change Nonvolatile Memory Devices Using Ge_2Sb_2Te_5
- Dry Etching of Ge_2Sb_2Te_5 Thin Films into Nanosized Patterns Using TiN Hard Mask
- Lower Power and Higher Speed Operations of Phase-Change Memory Device Using Antimony Selenide (Sb_xSe_)
- Etching Characteristics of Ge_2Sb_2Te_5 Using High-Density Helicon Plasma for the Nonvolatile Phase-Change Memory Applications
- ED2000-68 / SDM2000-68 Calculation of polarization and mobile charge density in ferroelectric films on Si using TVS (Triangular Voltage Sweep) method
- ED2000-68 / SDM2000-68 Calculation of polarization and mobile charge density in ferroelectric films on Si using TVS (Triangular Voltage Sweep) method
- A Low Operating Voltage(3V) Metal-Ferroelectric-Semiconductor(MFS)FET's Using LiNbO_3/Si(100)Structures For Nonvolatile Memory Application
- A Low Operating Voltage(3V)Metal-Ferroelectric-Semiconductor(MFS)FET's Using LiNbO_3/Si(100)Structures For Nonvolatile Memory Application
- Structural and Ferroelectric Properties of Sol-Get Deposited Nb-doped Pb[(Sc_Nb_)_Ti_]O_3 Thin Films
- Properties of MFSFET's with Various Gate Electrodes Using LiNbO_3/Si (100) Structures
- Properties of MFSFET's with Various Gate Electrodes Using LiNbO_3/Si (100) Structures
- Properties of MFSFET's with Various Gate Electrodes Using LiNbO_3/Si (100) Structures
- Fabrication and Characterization of Ferroelectric-Gate Memory Devices Using (Bi, La)4Ti3O12/HfO2 Structure (先端デバイスの基礎と応用に関するアジアワークショップ)