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Micro-electronics Laboratory Electronics And Telecommunications Research Institute | 論文
- Fabrication and Characterization of Ferroelectric-Gate Memory Devices Using (Bi, La)_4 Ti_3O_/HfO_2 Structure (AWAD2003 (Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices))
- New High-k SrTa_2O_6 Gate Dielectrics Prepared by Plasma-Enhanced Atomic Layer Chemical Vapor Deposition : Surface, interface, and Films
- SrTa_2O_6 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition : Surfaces, Interfaces, and Films
- Phase Formations and Electrical Properties of(Sr_xBa_)Bi_2Ta_2O_9 Thin Films
- A Non-destructive Readout Single Transistor FRAM with Floating Well structures
- A Non-destructive Readout Single Transistor FRAM with Floating Well structures
- A Non-destructive Readout Single Transistor FRAM with Floating Well structures
- Effects of the Interfacial Layers on the Time-Dependent Leakage Current Characteristics of (Ba,Sr)TiO_3 Thin Films
- Pt/RuO_2 Hybrid Bottom Electrodes and Their Effects on the Electrical Properties of (Ba, Sr)TiO_3 Thin Films