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Magnachip Semiconductor Inc. | 論文
- Analysis of Transfer Gate in CMOS Image Sensor(Session 6A : TFTs and Sensors)
- New Observation of NBTI Degradation and Recovery Effect of Plasma Nitrided Oxide in Nano Scale PMOSFET's
- Temperature effects on silicon-oxide-nitride-oxide-silicon transistors under channel hot electron injection operation (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Temperature effects on silicon-oxide-nitride-oxide-silicon transistors under channel hot electron injection operation (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Dependence of Analog and Digital Performances on Mechanical Film Stress of ILD Layers in Nanoscale CMOSFETs
- Abnormal Oxidation of Nickel Silicide on N-Type Substrate and Effect of Preamorphization Implantation
- Low Temperature Formation of Highly Thermal Immune Ni Germanosilicide Using NiPt Alloy with Co Over-layer in Si_Ge_x according to Different Ge Fractions (x)
- Characterization of the Co-Silicide Penetration Depth into the Junction Area for 0.15 and Sub-0.15 Micron CMOS Technology
- Analysis of Transfer Gate in CMOS Image Sensor(Session 6A : TFTs and Sensors)
- Ramping Amplitude Multi-Frequency Charge Pumping Technique for Silicon-Oxide-Nirtride-Oxide-Silicon Flash EEPROM Cell Transistors
- Characterization of the Co-Silicide Penetration Depth into the Junction Area
- Characterization of Nickel-Silicide Dependence on the Substrate Dopants for Nanoscale Complementary Metal Oxide Semiconductor Technology
- Highly Thermal Immune Ni GermanoSilicide with Nitrogen-Doped Ni and Co/TiN Double Capping Layer for Nano-Scale CMOS Applications
- Novel Nitrogen Doped Ni Self-Alingned Silicide Process for Nanoscale Complementary Metal Oxide Semiconductor Technology
- Thermally Robust Nickel Silicide Process for Nano-Scale CMOS Technology(Si Devices and Processes, Fundamental and Application of Advanced Semiconductor Devices)
- Novel Nitrogen doped Ni SALICIDE Process for Nano-Scale CMOS Technology
- Thermally Robust Nickel Silicide Process Technology for Nano-Scale CMOS Technology(Session B5 Si-Devices I)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- Thermally Robust Nickel Silicide Process Technology for Nano-Scale CMOS Technology(Session B5 Si-Devices I)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- Thermally Robust Nickel Silicide Process Technology for Nano-Scale CMOS Technology
- Study of Abnormal Oxidation of Ni-Germanosilicide by High Temperature Post-Silicidation Annealing(Session A3 Si Materails and Process)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))