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LSI Research and Development Laboratory Mitsubishi Electric Corporation | 論文
- Cold and Low-Energy Ion Etching(COLLIE) : Etching and Deposition Technology
- Reactive Ion Beam Etching Using a Selective Gallium Doping Method
- Internal Loss of InGaAsP/InP Buried Crescent (λ=1.3μm) Laser : B-4: LD AND LED-2
- Low Threshold Current 1.3 μm InGaAsP Buried Crescent Lasers : B-2: LD AND LED-1
- Radiation Annealing of Si- and S-Implanted GaAs
- Characterization of Deep Levels in Semi-Insulating GaAs Crystals by a Spectroscopic Photoelectrochemical Current
- Broadening of Spectral Response Width by a-Si/aSiGe p-i-n type Solar Cells : III-4: AMORPHOUS SOLAR CELLS : Device Performances
- Zinc Diffusion into InSb
- Preparation of High Quality n-Hg_Cd_Te Epitaxial Layer and Its Application to Infrared Detector (λ=8-14 μm)
- Low-Temperature Characteristics of Buried-Channel Charge-Coupled Devices
- Device Modeling for Recessed Oxide Isolation in Bipolar LSIs
- Refractive Index of In_Ga_As_P_ at Its Laser Oscillating Wavelength of 1.2 μm
- Comparison of High Energy Proton Radiation Damages on AlGaAs/GaAs and Si Solar Cells : I-1: SILICON SOLAR CELLS (1) : Ion Implantation & Radiation damage
- An AlGaAs/GaAs Concentrator Solar Cell Operating at High Concentration Ratios without Forced Cooling
- Performance of 1 kWp AlGaAs/GaAs Terrestrial Concentrator Solar Cell Amay : II-2: COMPOUND SEMICONDUCTOR SOLAR CELLS (II)
- A New Structure for High Efficiency and Humidity Resistant AlGaAS/GaAs Solar Cells : II-2: COMPOUND SEMICONDUCTOR SOLAR CELLS (II)
- High Efficiency Al_xGa_As-GaAs Solar Cells with High Open-Circuit Voltage and High Fill Factor : III-3: III-V COMPOUND SOLAR CELLS
- High Efficiency Al_xGa_As-GaAs Solar Cells with High Open-Circuit Voltage and High Fill Factor : B-6: SOLAR CELLS AND AMORPHOUS DEVICES
- A Dual-Stripe Phase-Locked Diode Laser
- Effects of Arsenic Pressure on GaAs Heat-Treated in Hydrogen