Device Modeling for Recessed Oxide Isolation in Bipolar LSIs

概要

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As the packing density of LSIs (Large Scale Integrated Circuits) increases, it becomes more and more important to reduce the isolation distance between devices, especially in bipolar LSIs. At high packing densities, however, manufacturing processes become so complex that experimental optimization of each process is extremely difficult. In view of this situation, we have devised a bipolar model that includes impact ionization to investigate how the isolation breakdown voltage is influenced by field doping and recessed oxidation. The device model described here is shown to be very effective in optimizing a number of process parameters.
社団法人応用物理学会の論文
1983-12-20