スポンサーリンク
Joint Research Center For Atom Technology Angstrom Technology Partnership | 論文
- Room Temperature Nanoimprinting Using Release-Agent Spray-Coated Hydrogen Silsesquioxane
- Amorphous-to-Polycrystalline Silicon Transition in Hot Wire Cell Method
- Fabrication of Nanomanipulator with SiO_2/DLC Heterostructure by Focused-Ion-Beam Chemical Vapor Deposition
- Electron-Beam-Induced Selective Thermal Decomposition of Ultrathin SiO_2 Layers Used in Nanofabrication
- Polycrystalline Cu(InGa)Se_2 Thin-Film Solar Cells with ZnSe Buffer Layers
- Comparison of Young's Modulus Dependency on Beam Accelerating Voltage between Electron-Beam- and Focused Ion-Beam-Induced Chemical Vapor Deposition Pillars
- Structure and Resonant Characteristics of Amorphous Carbon Pillars Grown by Focused-Ion-Beam-Induced Chemical Vapor Deposition
- Self-Developing Properties of an Inorganic Electron Beam Resist and Nanometer-Scale Patterning Using a Scanning Electron Beam
- Electron-Stimulated Desorption and in situ Scanning Electron Microscopy Study on Self-Developing Reaction of High-Resolution Inorganic Electron Beam Resist
- Layer-by-Layer Oxidation of Si(001) Surfaces
- High Deposition Rate of Polycrystalline Silicon Thin Films Prepared by Hot Wire Cell Method
- High-Temperature MBE Growth of Si-Direct Current Heating Effects on (111) and (001) Vicinal Surfaces
- Diffusion Constants of Si Adsorbates on a Si(001) Surface
- Observation of Si(001) Surface Domains in Absorption Current Images of an Electron Microscope
- Observation of 1-nm-High Structures on a Si (001) Surface Using a Differential Interference Optical Microscope
- Room Temperature Nanoimprint Technology Using Hydrogen Silsequjoxane (HSQ)
- Evaluation of fluorinated diamond like carbon as antisticking layer by scanning probe microscopy
- Investigating Line-Edge Roughness in Calixarene Fine Patterns Using Fourier Analysis
- Mechanism of Layer-by-Layer Oxidation of Si(001)Surfaces by Two-Dimensional Oxide-Island Nucleation at SiO_2/Si Interfaces
- Mechanism of Layer-by-Layer Oxidation of Si (001) Surfaces Proceeding by Two-Dimensional Oxide-Island Nucleation at SiO_2/Si Interfaces