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Japan Advanced Inst. Sci. And Technol. (jaist) Ishikawa Jpn | 論文
- Hall Mobility of Low-Temperature-Deposited Polysilicon Films by Catalytic Chemical Vapor Deposition Method
- Nanometer Pattern-Mask Fabricated by Conventional Photolithography
- Microstructure of Polycrystalline Silicon Films Formed through Explosive Crystallization Induced by Flash Lamp Annealing
- Radical Species Formed by the Catalytic Decomposition of NH3 on Heated W Surfaces
- Effects of High Nitrogen Pressure and Thermal Treatment on Adhesion to Amorphous Silicon/Silicon Nitride/Polyethersulfone Substrate during Excimer Laser Annealing
- Desigrn Criterion and Operation Mechanism for 4.5 kV Injection Enhanced Gate Transistor
- Fabrication of the Si/Al_2O_3/SiO_2/Si Structure Using O_2 Annealed Al_2O_3/Si Structure
- Fabrication of the Si/Al_2O_3/SiO_2/Si Structure by Using the O_2 Annealed Al_2O_3/Si Structure
- Formation of Poly(silsesquioxane) Gel Containing Optically Active 1, 3-Dimethyl-1, 3-diphenyldisiloxane as a Connecting Unit
- Coating techniques of metal chambers for remote catalytic chemical vapor deposition applications
- Selection of Material for the Back Electrodes of Thin-Film Solar Cells Using Polycrystalline Silicon Films Formed by Flash Lamp Annealing
- Formation of Several-Micrometer-Thick Polycrystalline Silicon Films on Soda Lime Glass by Flash Lamp Annealing
- Distribution of Phosphorus Atoms and Carrier Concentrations in Single-Crystal Silicon Doped by Catalytically Generated Phosphorous Radicals
- Formation of Highly Uniform Micrometer-Order-Thick Polycrystalline Silicon Films by Flash Lamp Annealing of Amorphous Silicon on Glass Substrate
- Improvement of Deposition Rate by Sandblasting of Tungsten Wire in Catalytic Chemical Vapor Deposition
- Effect of Radical-Doped n+ Back Surface Field Layers on the Effective Minority Carrier Lifetimes of Crystalline Silicon with Amorphous Silicon Passivation Layers Deposited by Catalytic Chemical Vapor Deposition
- Large-Grain Polycrystalline Silicon Films Formed through Flash-Lamp-Induced Explosive Crystallization
- Low Temperature Phosphorus Doping in Silicon Using Catalytically Generated Radicals
- Preparation of Low-Stress SiNx Films by Catalytic Chemical Vapor Deposition at Low Temperatures
- High-Quality Polycrystalline Silicon Films with Minority Carrier Lifetimes over 5 μs Formed by Flash Lamp Annealing of Precursor Amorphous Silicon Films Prepared by Catalytic Chemical Vapor Deposition