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Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung University | 論文
- A Novel Triple δ-Doped SiGe Heterostructure Field-Effect Transistor
- Anomalous Hot-Carrier-Induced On-Resistance Degradation in High-Voltage LDMOS Transistors
- Mechanism and Reliability Index of Hot-Carrier Degradation in LDMOS Transistors
- Hot-Carrier Reliability Improvement in Submicron High-Voltage DMOS Transistors
- Growth of Highly Strained InGaAs Quantum Wells by Metalorganic Chemical Vapor Deposition with Application to Vertical-Cavity Surface-Emitting Laser
- High-Power GaN-Based Light-Emitting Diodes with Transparent Indium Zinc Oxide Films
- Robust High-κ HfO_xN_y n-MOSFETs Using Low Work Function TbN Gate
- Junction Temperature and Thermal Resistance Measurement in High-Power Light Emitting Diodes Using A Real-Time Diode Forward Voltage Sampling Technique
- A Vertical-Structured Ni/GaN Schottky Barrier Diode Using Electroplating Nickel Substrate
- Effect of Surface Treatment on the Performances of Vertical-structure GaN-based High-power LEDs with Electroplating Metallic Substrate
- Device Linear Improvement Using SiGe/Si Heterostructure Delta-Doped-Channel Field-Effect Transistors
- Effect of Mobility Degradation and Supply Voltage on NBTI Induced Drain Current Degradation
- Investigations of δ-Doped InAlAs/InGaAs/InP High-Electron-Mobility Transistors with Linearly Graded In_xGa_As Channel
- Double-Transconductance-Plateau Characteristics in InGaAs/GaAs Real-Space Transfer High Electron Mobility Transistor
- High Power GaN-Based LEDs with Transparent Indium-Zinc-Oxide Films
- Development of gas sensors based on tungsten oxide nanowires in a metal/SiO_2/metal structure and their sensing responses to NO_2
- Hydrogen and Oxygen Plasma Effects on Undoped and n-p Compensation-doped Single- and Multilayer Polycrystalline Silicon Resistor Films
- A Novel Sn-based Metal Substrate Technology for the Fabrication of Vertical-Structure GaN-Based High Power Light-Emitting Diodes
- Low Temperature Activation of Mg-Doped GaN in O_2 Ambient : Semiconductors
- Vertical High Quality Mirrorlike Facet of GaN-Based Device by Reactive Ion Etching