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Institute Of Electronics National Chiao-tung University | 論文
- A New Symmetric Inductor Model for RF Circuits under Single-end and Differential Operations
- Improved electrical characteristics of Pt/Gd_2O_3/GaAs MOS capacitors with surface preparation procedures
- Reliability of Strained SiGe Channel p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Ultra-Thin ($\text{EOT}=3.1$ nm) N2O-Annealed SiN Gate Dielectric
- Deep Sub-Micron Strained Si_Ge_ Channel p-channel Metal-Oxide-Semiconductor Field-Effect Transistors (pMOSFETs) with Ultra-Thin N_2O-Annealed SiN Gate Dielectric
- Subpicosecond Carrier Lifetime in Low-Temperature-Grown GaAs Layer on (311)-Oriented Substrate
- Electrical Enhancement of Polycrystalline Silicon Thin-Film Transistors Using Fluorinated Silicate Glass Passivation Layer
- Deep Sub-Micron Strained Si0.85Ge0.15 Channel p-channel Metal-Oxide-Semiconductor Field-Effect Transistors (pMOSFETs) with Ultra-Thin N2O-Annealed SiN Gate Dielectric
- The Effects of Super-Steep-Retrograde Indium Channel Profile on Deep Submicron n-Channel Metal-Oxide-Semiconductor Field-Effect Transistor
- Efficiency and Droop Improvement in InGaN/GaN Light-Emitting Diodes by Selective Carrier Distribution Manipulation
- Nonvolatile Flash Memory Devices Using CeO2 Nanocrystal Trapping Layer for Two-Bit per Cell Applications
- Characteristics of the Inter-Poly Al2O3 Dielectrics on NH3-Nitrided Bottom Poly-Si for Next-Generation Flash Memories
- The Role of a Resist During O2 Plasma Ashing and Its Impact on the Reliability Evaluation of Ultrathin Gate Oxides
- Electrical Properties of High-$\kappa$ Praseodymium Oxide Polycrystalline Silicon Thin-Film Transistors with Nitrogen Implantation
- Electrical Characteristics of Thin HfO2 Gate Dielectrics Prepared Using Different Pre-Deposition Surface Treatments
- Improvements on Electrical Characteristics of p-Channel Metal–Oxide–Semiconductor Field Effect Transistors with HfO2 Gate Stacks by Post Deposition N2O Plasma Treatment
- Characterizing the Channel Backscattering Behavior in Nanoscale Strained Complementary Metal Oxide Semiconductor Field-Effect Transistors
- High-Performance Solid-Phase Crystallized Polycrystalline Silicon Thin-Film Transistors with Floating-Channel Structure