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Institute Of Electronics National Chiao-tung University | 論文
- Impact of Thermal Stability on the Characteristics of Complementary Metal Oxide Semiconductor Transistors with TiN Metal Gate
- The Combined Effects of Nitrogen Implantation at S/D Extension and N_2O Oxide on 0.18μm N- and P-Metal Oxide Field Effect Transistors (MOSEETs)
- Characterization of Antenna Effect by Nondestructive Gate Current Measurement
- Effects of Rapid Thermal Annealing on Si Delta-Doped GaInP Grown by Low Pressure Metalorganic Chemical Vapor Deposition
- Silicon Delta Doping of GaInP Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
- P-SONOS and N-SONOS Transient Current and Field Modeling for Program and Erase
- A Novel Process-Compatible Floating Channel Crystallization Technique to Fabricate High-Performance Poly-Si TFTs
- Improvement of Electrical Characteristics for Novel Fluorine-Incorporated Poly-Si TFTs with TiN Gate Electrode and Pr_2O_3 Gate Dielectric
- Electrical Characteristics of Thin HfO_2 Gate Dielectrics Prepared Using Different Pre-Deposition Surface Treatments
- Back-Gating Effects on the Ga_In_P/InP/InGaAs High-Electron-Mobility Transistor
- Cation Source Dependence of Ga_In_P Growth Rate by Low-Pressure Metalorganic Chemical Vapor Deposition
- Analysis of Average Transport Critical Current Density of Oxide Superconductors Deposited on a Silver Base
- Orientation Dependence of Coherent Hole Oscillations in GaAs/AlGaAs Coupled Quantum Wells
- Double Graded-Gap a-SiC:H P-I-N Thin-Film LED with Composition-Graded N-Layer and Carbon-Increasing P-Layer
- Photoluminescence of Heavily p-Type-Doped GaAs : Temperature and Concentration Dependences
- The Effect of Temperature on I-V Characteristics of a-Si:H Photodiode
- The Characteristics and Reliability of Multi-channel Poly-Si TFTs
- Optimization on Layout Structures of LTPS TFTs for On-Panel ESD Protection Design
- Synthesis of High-T_c YBa_2Cu_3O_ Superconductors at a Low Annealing Temperature from a Glass Precursor
- Effect of Strain on Static and Dynamic NBTI of pMOSFETs