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Institute Of Electronics National Chiao Tung University | 論文
- A New Method to Extract MOSFET Threshold Voltage, Effective Channel Length, and Channel Mobility Using S-parameter Measurement(Active Devices and Circuits)(Advances in Characterization and Measurement Technologies for Microwave and Millim
- Analysis of Temperature Effects on the High-Frequency Characteristics of RF LDMOS Transistors
- Characterization of RF LDMOS Transistors with Different Layout Structures
- Analysis of Narrow Width Effects in Polycrystalline Silicon Thin Film Transistors
- Degradation of Low-Frequency Noise in PD SOI MOSFETs after Hot-Carrier Stress
- Passivation of GaAs Power Field-Effect Transistor Using Electron Cyclotron Resonance Chemical Vapor Deposition Silicon Nitride Technique
- TiWN Schottky Contacts to n-Ga_In_P
- Double Graded-Gap Hydrogenated Amorphous Silicon Carbide Thin-Film Light-Emitting Diode with Composition-Graded N Layer and Carbon-Increasing P Layer
- Characteristics of Poly-Si Nanowire Thin Film Transistors with Double-Gated Structures
- Impacts of LP-SiN Capping Layer and Lateral Diffusion of interface Trap on Hot Carrier Stress of NMOSFETs
- A novel method to convert metallic-type CNTs to semiconducting-type CNT-FETs
- Application of Field-Induced Source/Drain Schottky Metal-Oxide-Semiconductor to Fin-Like Body Field-Effect Transistor : semiconductors
- Impact of Thermal Stability on the Characteristics of Complementary Metal Oxide Semiconductor Transistors with TiN Metal Gate
- Plasma-Process-Induced Damage in Sputtered TiN Metal-Gate Capacitors with Ultrathin Nitrided Oxides
- The Combined Effects of Nitrogen Implantation at S/D Extension and N_2O Oxide on 0.18μm N- and P-Metal Oxide Field Effect Transistors (MOSEETs)
- The Effects of Shallow Germanium Halo Doping on N-Channel Metal Oxide Semiconductor Field Effect Transistors
- A Radiation-Hard Flash Cell Using Horn-Shaped Floating Gate and N_2O Annealing
- A Study on the Radiation Hardness of Flash Cell with Horn-Shaped Floating-Gate
- Effects of Floating-Gate Doping Concentration of Flash Cell Performance
- The Role of a Resist During O_2 Plasma Ashing and Its Impact on the Reliability Evaluation of Ultrathin Gate Oxides