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Institute Of Electro-optical Science And Engineering Advance Optoelectronics Technology Center Natio | 論文
- Lifetime Improvement of Organic Light Emitting Diodes using LiF Thin Film and UV Glue Encapsulation
- Improvement of High-Speed Oxide-Confined Vertical-Cavity Surface-Emitting Lasers
- Nitride based Power Chip with Indium-Tin-Oxide p-Contact and Al Back-Side Reflector
- InGaN/GaN Light-Emitting Diodes with Rapidly Thermal-Annealed Ni/ITO p-Contacts
- AlGaN/GaN Modulation-Doped Field-Effect Transistors with An Mg-doped Carrier Confinement Layer
- Noise Analysis of Nitride-Based Metal–Oxide–Semiconductor Heterostructure Field Effect Transistors with Photo-Chemical Vapor Deposition SiO2 Gate Oxide in the Linear and Saturation Regions
- Radio-Frequency Inductors on High-Resistivity Silicon Substrates with a Nanocrystalline Silicon Passivation Layer
- High Optical-Gain AlGaN/GaN 2 Dimensional Electron Gas Photodetectors
- InGaN/GaN Multi-Quantum Well Metal-Insulator Semiconductor Photodetectors with Photo-CVD SiO2 Layers
- GaInNAs p–i–n Photodetectors with Multiquantum Wells Structure
- Suppression of Nonradiation Recombination by Selected Si Doping in AlGaN Barriers for Ultraviolet Light-Emitting Diodes
- Enhancement of Light Extraction Efficiency in GaN-Based Blue Light-Emitting Diodes by Doping TiO
- GaN-Based Light Emitting Diodes with Si-Doped In0.23Ga0.77N/GaN Short Period Superlattice Current Spreading Layer
- Enhancement of Light Extraction Efficiency in GaN-Based Blue Light-Emitting Diodes by Doping TiO₂ Nanoparticles in Specific Region of Encapsulation Silicone (Special Issue : Recent Advances in Nitride Semiconductors)
- High-Indium-Content InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes