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Institute Of Electro-optical Science And Engineering Advance Optoelectronics Technology Center Natio | 論文
- Bistable Resistive Switching Characteristics of Poly(2-hydroxyethyl methacrylate) Thin Film Memory Devices
- Strain-Compensated GaAsN/InGaAs Superlattice Structure Solar Cells
- Study of Pentacene-Based Organic Thin Film Transistor with PMMA as Insulator
- Color-Tunable Polymer Light-Emitting Diodes with Conjugated Polymer Homojunctions
- Enhanced Luminescence Efficiency of InGaN/GaN Multiple Quantum Wells by a Strain Relief Layer and Proper Si Doping
- Optical Studies of GaAs Nanowires Grown on Trenched Si(001) Substrate by Cathodoluminescence (Special Issue : Microprocesses and Nanotechnology)
- Effect of Post Annealing on Performance of Polymer Light-Emitting Devices
- GaN-Based Light-Emitting Diodes Grown on Photonic Crystal-Patterned Sapphire Substrates by Nanosphere Lithography
- Reduction in Turn-on Voltage in GaInNAs and InGaAs-Based Double-Heterojunction Bipolar Transistors
- InGaN Metal–Semiconductor–Metal Photodiodes with Nanostructures
- Investigation of Nonvolatile Memory Effect of Organic Thin-Film Transistors with Triple Dielectric Layers
- Enhancement of Optical Polarization Anisotropy of a-Plane InGaN/GaN Multiple Quantum Well Structure from Violet to Blue-Green Light
- Size-Dependent Resonant Cavity Light-Emitting Diodes for Collimating Concerns
- The Study of Stress Effects in GaN Epilayers on Very Thin Sapphire Substrates Using Chemical Mechanical Polishing Technique
- n-UV+Blue/Green/Red White Light Emitting Diode Lamps
- Postdeposition Annealing Effect on Redshift Behavior of Electroluminescence for Polymer Light-Emitting Diodes
- Interface Modification in Organic Thin Film Transistors
- High Temperature Performance and Low Frequency Noise Characteristics of AlGaN/GaN/AlGaN Double Heterostructure Metal-Oxide-Semiconductor Heterostructure Field-Effect-Transistors with Photochemical Vapor Deposition SiO2 Layer
- GaN Metal-Semiconductor-Metal Visible-Blind Photodetectors with Transparent Indium-Tin-Oxide Contact Electrodes
- Efficiency Enhancement of Top Emission Organic Light-Emitting Diodes with Ni/Au Periodic Anode