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Imec | 論文
- SiGe Recessed Source-Drain (RSD) Stressors for PMOS : Effect of Device Integration Flow and Increased Ge Content on Electrical Performance
- Feasibility analysis of direct tunneling through medium-κ dielectrics for embedded RAM applications
- Characteristics and Correlated Fluctuations of the Gate and Substrate Current after Oxide Soft-Breakdown
- Oxygen-Vacancy-Induced V_t shift in La-containing Devices
- マルチモードトランシーバに関する報告
- Charge Trapping in SiO_x/ZrO_2 Gate Dielectric Stacks
- Measurement of Hole Transport Parameters in Ultra-Thin SiGe Layers and Their Application in 2D Device Simulations of Heterojunction pMOSFETs
- Performance and Reliability of 0.35μm/0.25μm HIMOS^【○!R】 Technology for Embedded Flash Memory Applications
- Size Shrinkage of Methacrylate-based Terpolymer Latexes Synthesized by Free Radical Polymerization : Kinetics and Influence of Main Reaction Parameters
- Simulation of Substrate Currents(the IEEE International Conference on SISPAD '02)
- Size Shrinkage of Methacrylate-based Terpolymer Latexes Synthesized by Free Radical Polymerization: Kinetics and Influence of Main Reaction Parameters
- Investigation of Light-Induced Deep-Level Defect Activation at the AlN/Si Interface
- Simultaneous Atomic Force Microscope and Quartz Crystal Microbalance Measurements : Interactions and Displacement Field of a Quartz Crystal Microbalance(Instrumentation, Measurement, and Fabrication Technology)
- Reliability challenges for advanced copper low-k interconnects
- Perspective on Emerging Devices and their Impact on Scaling Technologies
- 人工血管とその成形加工
- AlGaN/GaN/AlGaN Double Heterostructures Grown on 200mm Silicon (111) Substrates with High Electron Mobility
- Aluminum Implantation in Germanium : Uphill Diffusion, Electrical Activation, and Trapping
- 三次元積層LSIチップにおける基板ノイズの層間評価(3次元集積,低電圧/低消費電力技術,新デバイス・回路とその応用)
- 三次元積層LSIチップにおける基板ノイズの層間評価(3次元集積,低電圧/低消費電力技術,新デバイス・回路とその応用)