Simulation of Substrate Currents(<Special Issue>the IEEE International Conference on SISPAD '02)

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概要

• 論文の詳細を見る

• Recently, a new approach was presented to determine the high-frequency response of on-chip passives and interconnects. The method solves the electric scalar and magnetic vector potentials in a prescribed gauge. The latter one is included by introducing an additional independent scalar field, whose field equation needs to be solved. This additional field is a mathematical aid that allows for the construction of a gauge-conditioned, regular matrix representation of the curl-curl operator acting on edge elements. This paper reports on the convergence properties of the new method and shows the first results of this new calculation scheme for VLSI-based structures at high frequencies. The high-frequent behavior of the substrate current, the skin effect and current crowding is evaluated.

• 社団法人電子情報通信学会の論文
• 2003-03-01

著者

• Meuris Peter

  Imec

• SCHOENMAKER Wim

  IMEC

• MAGNUS Wim

  IMEC

• MALESZKA Bert

  IMEC

関連論文

• Simulation of Substrate Currents(the IEEE International Conference on SISPAD '02)

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