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IMEC, Kapeldreef 75, B-3001 Leuven, Belgium | 論文
- Application of a Nano-Mechanical Sensor to Monitor Stress in Copper Damascene Interconnects
- Performance Degradation Induced by Fringing Field-Induced Barrier Lowering and Parasitic Charge in Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistors with High-κ Dielectrics
- Influence of the UV cure on advanced plasma enhanced chemical vapour deposition low-k materials (Special issue: Advanced metallization for ULSI applications)
- High Hole Mobility in 65 nm Strained Ge p-Channel Field Effect Transistors with HfO2 Gate Dielectric
- Silicide Engineering to Boost Si Tunnel Transistor Drive Current
- Multi-Gate Fin Field-Effect Transistors Junctions Optimization by Conventional Ion Implantation for (Sub-)22 nm Technology Nodes Circuit Applications
- Advanced Organic Polymer for the Aggressive Scaling of Low-$k$ Materials
- Evaluation of Post Ion-Implantation Resist Strip with the Background Signal of a Light Scattering Tool
- Integration and Dielectric Reliability of 30 nm Half Pitch Structures in Aurora\textregistered LK HM
- Dielectric Reliability of 50 nm Half Pitch Structures in Aurora\textregistered LK
- Improved Performance of In0.53Ga0.47As-Based Metal--Oxide--Semiconductor Capacitors with Al:ZrO2 Gate Dielectric Grown by Atomic Layer Deposition
- Integration of Porogen-Based Low-$k$ Films: Influence of Capping Layer Thickness and Long Thermal Anneals on Low-$k$ Damage and Reliability
- Seed Layer and Multistack Approaches to Reduce Leakage in SrTiO3-Based Metal–Insulator–Metal Capacitors Using TiN Bottom Electrode
- Alternative Photoresist Removal Process to Minimize Damage of Low-$k$ Material Induced by Ash Plasma
- Investigation of Light-Induced Deep-Level Defect Activation at the AlN/Si Interface
- Impact of Radiation-Induced Back-Channel Leakage and Back-Gate Bias on Drain Current Transients of Thin-Gate-Oxide Partially Depleted Silicon-On-Insulator n-channel Metal–Oxide–Semiconductor Field-Effect Transistors
- Advanced PMOS Device Architecture for Highly-Doped Ultra-Shallow Junctions
- AlGaN/GaN/AlGaN Double Heterostructures Grown on 200mm Silicon (111) Substrates with High Electron Mobility
- Aluminum Implantation in Germanium : Uphill Diffusion, Electrical Activation, and Trapping
- Proximity Effects Correction for Advanced Optical Lithography Processes