Improved Performance of In<sub>0.53</sub>Ga<sub>0.47</sub>As-Based Metal--Oxide--Semiconductor Capacitors with Al:ZrO<sub>2</sub> Gate Dielectric Grown by Atomic Layer Deposition
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概要
- 論文の詳細を見る
Atomic layer deposition of Al:ZrO<sub>2</sub> films on In<sub>0.53</sub>Ga<sub>0.47</sub>As substrates is shown to be a promising route to boost the oxide permittivity with respect to Al<sub>2</sub>O<sub>3</sub> gate dielectrics and concomitantly take benefit from the reducing effect of the trimethylaluminum precursor on the In<sub>0.53</sub>Ga<sub>0.47</sub>As surface. We demonstrates that increasing the number of initial Al<sub>2</sub>O<sub>3</sub> cycles in the growth sequence can improve the physical quality and the electrical response of the Al:ZrO<sub>2</sub>/In<sub>0.53</sub>Ga<sub>0.47</sub>As interface while preserving the overall composition of the oxide.
- 2011-09-25
著者
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Spiga Sabina
Laboratorio Mdm Imm-cnr
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Fanciulli Marco
Laboratorio Mdm Imm-cnr
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Lamagna Luca
Laboratorio Mdm Imm-cnr
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Caymax Matty
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
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Molle Alessandro
Laboratorio MDM, IMM-CNR, via C. Olivetti 2, I-20864 Agrate Brianza (MB), Italy
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Brammertz Guy
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
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Spiga Sabina
Laboratorio MDM, IMM-CNR, via C. Olivetti 2, I-20864 Agrate Brianza (MB), Italy
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Wiemer Claudia
Laboratorio MDM, IMM-CNR, via C. Olivetti 2, I-20864 Agrate Brianza (MB), Italy
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Merckling Clement
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
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Caymax Matty
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
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Fanciulli Marco
Laboratorio MDM, IMM-CNR, via C. Olivetti 2, I-20864 Agrate Brianza (MB), Italy
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