Effects of Thermal Treatments on the Trapping Properties of HfO_2 Films for Charge Trap Memories

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概要

• 論文の詳細を見る
• 2012-02-25

著者

• Spiga Sabina

  Laboratorio Mdm Imm-cnr

• Salicio Olivier

  Laboratorio Mdm Imm-cnr

• Driussi Francesco

  Diegm-university Of Udine

• LAMPERTI Alessio

  Laboratorio MDM, IMM-CNR

• CONGEDO Gabriele

  Laboratorio MDM, IMM-CNR

• Lamperti Alessio

  Laboratorio Mdm Imm-cnr

• Congedo Gabriele

  Laboratorio Mdm Imm-cnr

関連論文

• Improved Performance of In0.53Ga0.47As-Based Metal--Oxide--Semiconductor Capacitors with Al:ZrO2 Gate Dielectric Grown by Atomic Layer Deposition
• Direct Observation at Nanoscale of Resistance Switching in NiO Layers by Conductive-Atomic Force Microscopy
• Effects of Thermal Treatments on the Trapping Properties of HfO_2 Films for Charge Trap Memories

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