Direct Observation at Nanoscale of Resistance Switching in NiO Layers by Conductive-Atomic Force Microscopy
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概要
- 論文の詳細を見る
- 2011-05-25
著者
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Carmona Marion
Im2np Umr Cnrs 6242 Aix-marseille Universite Imt Technopole De Chateau Gombert
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Dumas Carine
Im2np Umr Cnrs 6242 Aix-marseille Universite Imt Technopole De Chateau Gombert
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DELERUYELLE Damien
IM2NP, UMR CNRS 6242, Aix-Marseille Universite, IMT Technopole de Chateau Gombert
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MULLER Christophe
IM2NP, UMR CNRS 6242, Aix-Marseille Universite, IMT Technopole de Chateau Gombert
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SPIGA Sabina
Laboratorio MDM, IMM-CNR
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FANCIULLI Marco
Laboratorio MDM, IMM-CNR
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Spiga Sabina
Laboratorio Mdm Imm-cnr
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Fanciulli Marco
Laboratorio Mdm Imm-cnr
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Muller Christophe
Im2np Umr Cnrs 6242 Aix-marseille Universite Imt Technopole De Chateau Gombert
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Deleruyelle Damien
Im2np Umr Cnrs 6242 Aix-marseille Universite Imt Technopole De Chateau Gombert
関連論文
- Improved Performance of In0.53Ga0.47As-Based Metal--Oxide--Semiconductor Capacitors with Al:ZrO2 Gate Dielectric Grown by Atomic Layer Deposition
- Direct Observation at Nanoscale of Resistance Switching in NiO Layers by Conductive-Atomic Force Microscopy
- Effects of Thermal Treatments on the Trapping Properties of HfO_2 Films for Charge Trap Memories
- Geometrical Effects on Valley-Orbital Filling Patterns in Silicon Quantum Dots for Robust Qubit Implementation