Fanciulli Marco | Laboratorio Mdm Imm-cnr
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概要
関連著者
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Fanciulli Marco
Laboratorio Mdm Imm-cnr
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Spiga Sabina
Laboratorio Mdm Imm-cnr
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Carmona Marion
Im2np Umr Cnrs 6242 Aix-marseille Universite Imt Technopole De Chateau Gombert
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Dumas Carine
Im2np Umr Cnrs 6242 Aix-marseille Universite Imt Technopole De Chateau Gombert
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DELERUYELLE Damien
IM2NP, UMR CNRS 6242, Aix-Marseille Universite, IMT Technopole de Chateau Gombert
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MULLER Christophe
IM2NP, UMR CNRS 6242, Aix-Marseille Universite, IMT Technopole de Chateau Gombert
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SPIGA Sabina
Laboratorio MDM, IMM-CNR
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FANCIULLI Marco
Laboratorio MDM, IMM-CNR
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Muller Christophe
Im2np Umr Cnrs 6242 Aix-marseille Universite Imt Technopole De Chateau Gombert
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Deleruyelle Damien
Im2np Umr Cnrs 6242 Aix-marseille Universite Imt Technopole De Chateau Gombert
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Lamagna Luca
Laboratorio Mdm Imm-cnr
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Caymax Matty
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
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Molle Alessandro
Laboratorio MDM, IMM-CNR, via C. Olivetti 2, I-20864 Agrate Brianza (MB), Italy
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Brammertz Guy
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
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Spiga Sabina
Laboratorio MDM, IMM-CNR, via C. Olivetti 2, I-20864 Agrate Brianza (MB), Italy
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Wiemer Claudia
Laboratorio MDM, IMM-CNR, via C. Olivetti 2, I-20864 Agrate Brianza (MB), Italy
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Merckling Clement
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
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Caymax Matty
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
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Fanciulli Marco
Laboratorio MDM, IMM-CNR, via C. Olivetti 2, I-20864 Agrate Brianza (MB), Italy
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FIORI Gianluca
Dipartimento di Ingegneria dell'Informazione, Universita di Pisa
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DE MICHIELIS
Laboratorio MDM, CNR-IMM
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PRATI Enrico
Laboratorio MDM, CNR-IMM
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LANNACCONE Giuseppe
Dipartimento di Ingegneria dell'Informazione, Universita di Pisa
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LANNACCONE Giuseppe
Dipartimento di Ingegneria dell'Informazione, Universita di Pisa
著作論文
- Improved Performance of In0.53Ga0.47As-Based Metal--Oxide--Semiconductor Capacitors with Al:ZrO2 Gate Dielectric Grown by Atomic Layer Deposition
- Direct Observation at Nanoscale of Resistance Switching in NiO Layers by Conductive-Atomic Force Microscopy
- Geometrical Effects on Valley-Orbital Filling Patterns in Silicon Quantum Dots for Robust Qubit Implementation