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Graduate School Of Information Science And Technology And Research Center For Integrated Quantum Ele | 論文
- Fabrication and characterization of GaAs quantum well buried in AlGaAs/GaAs heterostructure nanowires
- Characterization of Fabry-Pérot microcavity modes in GaAs nanowires fabricated by selective-area metal organic vapor phase epitaxy
- Quantum Well Wire Fabrication Method Using Self-Organized Multiatomic Steps on Vicinal (001) GaAs Surfaces by Metalorganic Vapor Phase Epitaxy
- Growth of Core-Shell InP Nanowires for Photovoltaic Application by Selective-Area Metal Organic Vapor Phase Epitaxy
- III-V Semiconductor Epitaxial Nanowires and Their Applications(Plenary Session)
- III-V Semiconductor Epitaxial Nanowires and Their Applications(Plenary Session)
- III-V semiconductor hetero-structure nanowires by selective area MOVPE
- Stochastic Resonance in GaAs-based Nanowire Field-Effect Transistors and Their Summing Network
- Stochastic Resonance in GaAs-based Nanowire Field-Effect Transistors and Their Summing Network
- MOVPE Condition Dependences of MnAs Nanoclusters Grown on GaInAs (111)A Surfaces
- A Novel Electron Wave Interference Device Using Multiatomic Steps on Vicinal GaAs Surfaces Grown by Metalorganic Vapor Phase Epitaxy: Investigation of Transport Properties
- A Novel Electron Wave Interference Device Using Multiatomic Steps on Vicinal GaAs Surfaces Grown by MOVPE : Investigation of Transport Properties
- 0.86 eV Platinum Schottky Barrier on Indium Phosphide by In Situ Electrochemical Process and Its Application to MESFETs
- Electrical Properties of Nanometer-Sized Schottky Contacts on n-GaAs and n-InP Formed by in Situ Electrochemical Process
- Stochastic Resonance in Schottky Wrap Gate-controlled GaAs Nanowire Field-Effect Transistors and Their Networks
- Vertical Surrounding Gate Transistors Using Single InAs Nanowires Grown on Si Substrates
- Characterization of low-frequency noise in GaAs nanowire field-effect transistors controlled by Schottky wrap gate (Special issue: Microprocesses and nanotechnology)
- Electrical Properties of Nanometer-Sized Schottky Contacts for Gate Control of III-V Single Electron Devices and Quantum Devices
- Growth and Characterization of a GaAs Quantum Well Buried in GaAsP/GaAs Vertical Heterostructure Nanowires by Selective-Area Metal Organic Vapor Phase Epitaxy
- Effect of Size Reduction on Operation Temperature and Switching Power in GaAs-Based Schottky-Wrap-Gate Quantum Wire Transistors