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Graduate School Of Information Science And Technology And Research Center For Integrated Quantum Ele | 論文
- Characterization of Conductance Switching in Schottky-Wrap-Gate-Controlled Quantum Wire Transistors in A-Few-Electron Regime(Session 7B Compound Semiconductor Devices III,AWAD2006)
- Characterization of Conductance Switching in Schottky-Wrap-Gate-Controlled Quantum Wire Transistors in A-Few-Electron Regime(Session 7B Compound Semiconductor Devices III)
- Computer Aided Design Software for Designing Phase-Shifting Masks
- Fabrication and Characterization of InP Nanowire Light-Emitting Diodes (Special Issue : Solid State Devices and Materials (1))
- One- and Two-Dimensional Spectral Diffusions in InP/InAs/InP Core–Multishell Nanowires
- Light Absorption in Semiconductor Nanowire Arrays with Multijunction Cell Structures (Special Issue : Applied Physics on Materials Research)
- Fast bilateral filtering using recursive moving sum
- Characterization of Low-Frequency Noise in Etched GaAs Nanowire Field-Effect Transistors Having SiNx Gate Insulator
- Metal–Organic Vapor Phase Epitaxial Growth Condition Dependences of MnAs Nanocluster Formation on GaInAs (111)A Surfaces
- Crystallographic Structure of InAs Nanowires Studied by Transmission Electron Microscopy
- Electrical Characterizations of InGaAs Nanowire-Top-Gate Field-Effect Transistors by Selective-Area Metal Organic Vapor Phase Epitaxy
- Drain-Current Deep Level Transient Spectroscopy Study of Carrier Emission Process from InAs Quantum Dots in GaAs Narrow-Wire Field Effect Transistors
- GaAs/InGaP Core--Multishell Nanowire-Array-Based Solar Cells
- Study on Nonlinear Electrical Characteristics of GaAs-Based Three-Branch Nanowire Junctions Controlled by Schottky Wrap Gates
- Indium-Rich InGaP Nanowires Formed on InP (111)A Substrates by Selective-Area Metal Organic Vapor Phase Epitaxy
- Selective-Area Growth of InAs Nanowires with Metal/Dielectric Composite Mask and Their Application to Vertical Surrounding-Gate Field-Effect Transistors
- Indium Phosphide Core--Shell Nanowire Array Solar Cells with Lattice-Mismatched Window Layer
- Voltage Transfer Characteristics in GaAs-Based Three-Branch Nanowire Junctions Controlled by Schottky Wrap Gates
- 0.86 eV Platinum Schottky Barrier on Indium Phosphide by In Situ Electrochemical Process and Its Application to MESFETs
- Novel Nanowire-Based Flip-Flop Circuit Utilizing Gate-Controlled GaAs Three-Branch Nanowire Junctions