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Graduate School Of Eng. Nagoya Univ. | 論文
- Invited Strain Engineering for SiGe Buffer Layers for High-Mobility Si Channels (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- HfO_2 Film Formation Combined with Radical Nitridation and Its Electrical Characteristic
- Dependence of Electrical Characteristics on Interfacial Structures of Epitaxial NiSi_2/Si Schottky Contacts Formed from Ni/Ti/Si System
- Pr-Oxide-Based Dielectric Films on Ge Substrates
- Local Current Leakage Characterization in La_2O_3-Al_2O_3 Composite Films by Conductive Atomic Force Microscopy
- Nanoscale Observations for Degradation Phenomena in SiO_2 and High-k Gate Insulators Using Conductive-Atomic Force Microscopy
- Crystalline and electrical properties of mictamict TiSiN gate MOS capacitors
- Film structures and electrical properties of Pr silicate formed by pulsed laser deposition
- Invited Strain Engineering for SiGe Buffer Layers for High-Mobility Si Channels (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- Thermal Stability and Electrical Properties of (La_2O_3)_(Al_2O_3)_x Composite Films
- Control of interfacial properties of Al2O3/Ge gate stack structure using radical nitridation technique (Special issue: Dielectric thin films for future electron devices: science and technology)
- Evaluation of Light Induced Damages in Plasma Process on Electrical Properties of Al_2O_3/Ge Gate Stack Structure
- Mechanical Properties and Chemical Reactions at the Directly Bonded Si–Si Interface
- Characterization of Damage of AlO/Ge Gate Stack Structure Induced with Light Radiation during Plasma Nitridation (Special Issue : Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials)
- Epitaxial Ag Layers on Si Substrates as a Buffer Layer for Carbon Nanotube Growth
- Nitrogen-Content Dependence of Crystalline Structures and Resistivity of Hf–Si–N Gate Electrodes for Metal–Oxide–Semiconductor Field-Effect Transistors
- Thermal Stability and Scalability of Mictamict Ti–Si–N Metal–Oxide–Semiconductor Gate Electrodes
- Crystallinity Improvement of Epitaxial Ge Grown on a Ge(110) Substrate by Incorporation of Sn
- Crystalline and Electrical Properties of Mictamict TiSiN Gate Metal–Oxcide–Semiconductor Capacitors
- Dependence of Electrical Characteristics on Interfacial Structure of Epitaxial NiSi2/Si Schottky Contacts Formed from Ni/Ti/Si System