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Government Industrial Research Institute Osaka | 論文
- Single Crystal Growth and the Upper Critical Field of the Superconductor U_6Fe
- de Haas-van Alphen Oscillation in Both Normal and Superconducting Mixed States of CeRu_2
- Electron Doping Effect on the Magnetic and Electric Properties of Ca_Y_xCo_2O_6
- Extended Appearance-Potential Fine-Structure Analysis of Fe(110) Surface
- High-Dose Implantation of MeV Carbon Ion into Silicon
- Three-Dimensional Analysis of Locally Implanted Atoms by MeV Helium Ion Microprobe
- Au^+-Ion-Implanted Silica Glass with Non-Linear Optical Property
- Microbeam Line of MeV Heavy Ions for Materials Modification and In-Situ Analysis : Beam-Induced Physics and Chemistry
- Microbeam Line of MeV Heavy Ions for Materials Modification and In-Situ Analysis
- Surface Structure of Ion-Implanted Silica Glass
- Ion-Beam 3C-SiC Heteroepitaxy on Si
- Epitaxial Growth of Pure ^Si Thin Films Using Isotopically Purified Ion Beams : Semiconductors
- Silicon Carbide Film Growth Using Dual Isotopical ^Si^- and ^C^+ Ion species
- Formation of High Purity films by Negative Ion Beam Sputtering Using an Ultra-high Vacuum Self-Sputtering Method
- Formation of Ultra High Pure Metal Thin Films by Means of a Dry Process
- Macroparticle-Free Ti-Al Films by Newly Developed Coaxial Vacuum Arc Deposition
- Formation of Crystalline SiC Buried Layer by High-Dose Implantation of MeV Carbon Ions at High Temperature
- INDIRECT DETERMINATION OF SULFIDE ION BY GAS-LIQUID CHROMATOGRAPHY
- 糸状菌によるポリカプロラクトンの分解
- Annealing of Se^+-Implanted GaAs Encapsulated with As-Doped a-Si:H