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Electroinformatics Group Nanoelectronics Research Institute National Institute Of Advanced Industria | 論文
- Phonon Assisted Tunneling and P/V-Ratio in a Magnetic Confined Quasi 0D InGaAs/InAlAs Resonant Tunneling Diode
- Experimental Fabrication of XMOS Transistors Using Lateral Solid-Phase Epitaxy of CVD Silicon Films
- Phonon Assisted Tunneling and Peak-to-Valley Ratio in a Magnetically Confined Quasi Zero Dimensional InGaAs/InAlAs Resonant Tunneling Diode
- All-Solid-State, THz Radiation Source Using a Saturable Bragg Reflector in a Femtosecond Mode-Locked Laser
- Effects of Film Quality of Hydrogenated Amorphous Silicon Grown by Thermal Chemical-Vapor-Deposition on Subsequent in-situ Hydrogenation Processes
- Spectroscopic Ellipsometry Studies on Ultrathin Hydrogenated Amorphous Silicon Films Prepared by Thermal Chemical Vapor Deposition
- Characterization of Column III Vacancies in Al_xGa_As/GaAs Heterostructures Grown by Molecular Beam Epitaxy through Slow Positrons
- FinFET-Based Flex-Vth SRAM Design for Drastic Standby-Leakage-Current Reduction
- Ultrafast Metal-Semiconductor-Metal Photoconductive Switches Fabricated Using an Atomic Force Microscope
- Fabrication of 40-150 nm Gate Length Ultrathin n-MOSFETs Using Epitaxial Layer Transfer SOI Wafers
- Fabrication of 40-150nm Gate Length Ultrathin n-MOSFETs Using ELTRAN SOI Wafers
- Improvement of SiO_2/4H-SiC Interface Using High-Temperature Hydrogen Annealing at Low Pressure and Vacuum Annealing
- Improvement of SiO2/4H-SiC Interface by Using High Temperature Hydrogen Annealing at 1000℃
- Effects of As_2 Flux and Atomic Hydrogen Irradiation for Growth of InGaAs Quantum Wires by Molecular Beam Epitaxy
- THz-radiation Generation from an Intracavity Saturable Bragg Reflector in a Magnetic Field
- Effects of As_2 Flux and Atomic Hydrogen Irradiation for Growth of InGaAs Quantum Wires by Molecular Beam Epitaxy
- Difference in Diffusion Length of Ga Atoms under As_2 and As_4 Flux in Molecular Beam Epitaxy
- Ultrafast Photoconductive Switches with a 43 nm Gap Fabricated Using an Atomic Force Microscope
- Fabrication of Quantum Wire Structures on Non-Planer InP Substrates by Molecular Beam Epitaxy (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
- Ultrafast Photoconductive Switches with a 43nm Gap Fabricated by an Atomic Force Microscope