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Device Development Center Hitachi Ltd. | 論文
- A 1.5-ns Cycle-Time 18-kb Pseudo-Dual-Port RAM with 9K Logic Gates (Special Section on the 1993 VLSI Circuits Symposium (Joint Issue with the IEEE Journal of Solid-State Circuits, Vol.29, No.4 April 1994))
- HCI-Free Selective Epitaxial SiGe Growth by LPCVD for 80-GHz BiCMOS Production
- Development and Fabrication of Digital Neural Network WSIs (Special Issue on New Architecture LSIs)
- PGMA as a High Resolution, High Sensitivity Negative Electron Beam Resist
- Rat-Race Hybrid Rings with a Microwave C-Section
- Dependence of Time-Dependent Dielectric Breakdown Lifetime on NH_3-Plasma Treatment in Cu Interconnects
- Light Emission Analysis of Dielectric Breakdown in Stressed Damascene Copper Interconnection
- Dielectric Breakdown and Light Emission in Copper Damascene Structure under Bias-Temperature Stress
- Delay Library Generation with High Efficiency and Accuracy on the Basis of RSM (Special lssue on SISPAD'99)
- Molecular cloning of membrane proteincDNAs by membrane-spanning-domain trapping
- Molecular cloning of root cap-specificgenes
- Performance Evaluation of Local Recovery Group Configuration in Reliable Multicast
- Performance Evaluation of Reliable Multicast Communication Protocols under Heterogeneous Transmission Delay Circumstances
- A 5 ns Cycle 1 Mb Synchronous SRAM with a Fast Write Technology (Special Issue on ULSI Memory Technology)
- 微細MOSFETの特性ばらつきに関する最近の動向について
- Dependence of Time-Dependent Dielectric Breakdown Lifetime on the Structure in Cu Metallization
- Copper Wires for High Speed Logic LSI Prepared by Low Pressure Long Throw Sputtering Method
- A16-087 PROFILE SIMULATIONS OF ELECTROPLATING AND CHEMICAL MECHANICAL POLISHING
- Analysis of Nonplanar Topography Effects of Phase Shift Masks on Imaging Characteristics
- 0.13 μm Pattern Delineation Using KrF Excimer Laser Light