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Dept. Of Electronics Engineering Chungnam National University | 論文
- Dual-gate ZnO thin-film transistors with SiNx as Dielectric Layer(Session 1A : Emerging Device Technology 1)
- Dual-gate ZnO thin-film transistors with SiNx as Dielectric Layer(Session 1A : Emerging Device Technology 1)
- Analysis of Transfer Gate in CMOS Image Sensor(Session 6A : TFTs and Sensors)
- New Observation of NBTI Degradation and Recovery Effect of Plasma Nitrided Oxide in Nano Scale PMOSFET's
- Temperature effects on silicon-oxide-nitride-oxide-silicon transistors under channel hot electron injection operation (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Temperature effects on silicon-oxide-nitride-oxide-silicon transistors under channel hot electron injection operation (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Dependence of Analog and Digital Performances on Mechanical Film Stress of ILD Layers in Nanoscale CMOSFETs
- Abnormal Oxidation of Nickel Silicide on N-Type Substrate and Effect of Preamorphization Implantation
- Low Temperature Formation of Highly Thermal Immune Ni Germanosilicide Using NiPt Alloy with Co Over-layer in Si_Ge_x according to Different Ge Fractions (x)
- Analysis of Transfer Gate in CMOS Image Sensor(Session 6A : TFTs and Sensors)
- New charge pumping method for characterization of charge trapping layer in oxide-nitride-oxide structure (Special issue: Solid state devices and materials)
- Ramping Amplitude Multi-Frequency Charge Pumping Technique for Silicon-Oxide-Nirtride-Oxide-Silicon Flash EEPROM Cell Transistors
- Characterization of Nickel-Silicide Dependence on the Substrate Dopants for Nanoscale Complementary Metal Oxide Semiconductor Technology
- 3-D stacked CMOS inverters using laser crystallized poly-Si film TFTs (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- 3-D stacked CMOS inverters using laser crystallized poly-Si film TFTs (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Investigation of device performance and negative bias temperature instability of plasma nitrided oxide in nanoscale p-channel metal-oxide-semiconductor field-effect transistor's (Special issue: Solid state devices and materials)
- Gate Engineering to Prevent NMOS Dopant Channeling for Nanoscale CMOSFET Technology
- Fabrication of Two-Layer stacked Poly-Si TFT CMOS Inverters Using Laser Crystallized channel with metal gate on Si Substrate
- Highly Thermal Immune Ni GermanoSilicide with Nitrogen-Doped Ni and Co/TiN Double Capping Layer for Nano-Scale CMOS Applications
- Novel Nitrogen Doped Ni Self-Alingned Silicide Process for Nanoscale Complementary Metal Oxide Semiconductor Technology