スポンサーリンク
Department of Materials Science and Engineering, Hanyang University | 論文
- Electrical Properties of Atomic Layer Deposited HfO_2 Gate Dielectric Film Using D_2O as Oxidant for Improved Reliability
- Highly Anisotropic Etching of Tungsten-Nitride for an X-Ray Mask Absorber with an Inductively Coupled Plasma System
- Structural Characterization of a Mo/Ru/Si Extreme Ultraviolet (EUV) Reflector by Optical Modeling
- Analysis of Multilayer Structure for Reflection of Extreme-Ultraviolet Wavelength
- Surfactant Effect on Oxide-to-Nitride Removal Selectivity of Nano-abrasive Ceria Slurry for Chemical Mechanical Polishing
- The Nanotopography Effect of Improved Single-Side-Polished Wafer on Oxide Chemical Mechanical Polishing : Semiconductors
- Numerical Investigation of Defect Printability in Extreme Ultraviolet (EUV) Reflector : Ru/Mo/Si Multilayer System
- Effects of SF_6 Addition to O_2 Plasma on Polyimide Etching
- The Effects of Pretreatment, CH_4 Gas Ratio and Bias Potential on the Microstructure of Microwave Plasma Enhanced Chemical Vapor Deposited Diamond Thin Films
- Study on the Properties of Interlayer Low Dielectric Polyimide during Cl-Based Plasma Etching of Aluminum
- Deposition and Characterization of Ta, TaN_x and Ta_4B Films for Next-Generation Lithography Mask Applications
- High Transmittance SiC Membrane Prepared by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition in Combination with Rapid Thermal Annealing
- The Removal of Intentionally Contaminated Cu Impurities on Si Substrate Using Remote H-plasma Treatments
- Amorphous Titanium Silicide Phase Formation by Surface Microroughness on Si(100)
- Electrical Properties of Atomic Layer Deposited HfO2 Gate Dielectric Film Using D2O as Oxidant for Improved Reliability
- Characteristics of Metal–Oxide–Semiconductor Field-Effect Transistors with HfO2/SiO2/Si and HfO2/SiOxNy/Si Stack Structures Formed by Remote Plasma Technique
- The Effects of Pretreatment, CH4 Gas Ratio and Bias Potential on the Microstructure of Microwave Plasma Enhanced Chemical Vapor Deposited Diamond Thin Films
- Effect of Vacuum Kinetic Sprayed TiO_2 Blocking Layer on the Performance of DSSC