スポンサーリンク
Department of Electronics, School of Engineering, Nagoya University | 論文
- Selective Area Growth of GaN on Si Substrate Using SiO_2 Mask by Metalorganic Vapor Phase Epitaxy
- Increase of Current Density of the Electron Probe by Correction of the Spherical Aberration with a Side-Entry Type Foil Lens
- Optical and Crystalline Properties of Epitaxial-Lateral-Overgrown-GaN Using Tungsten Mask by Hydride Vapor Phase Epitaxy
- Correction of the Spherical Aberration of the Objective Lens in a Conventional Transmission Electron Microscope by Means of a Foil Lens
- Raman Scattering in ZnS_xSe_ Alloys
- Characterization of ZnS_xSe1_x/(100)Gap Heterointerface by Raman Scattering : Semiconductors and Semiconductor Devices
- Selective Area Growth of GaN Using Tungsten Mask by Metalorganic Vapor Phase Epitaxy
- Characterization of the Shallow and Deep Levels in Si Doped GaN Grown by Metal-Organic Vapor Phase Epitaxy
- Rotatable Magnetic Anisotropy in Electron=Microscope Specimens of Permalloy
- Si-Doping in GaN Grown by Metal-Organic Vapor Phase Epitaxy Using Tetraethylsilane
- Gradual tilting of crystallographic orientation and configuration of dislocations in GaN selectively grown by vapour phase epitaxy methods
- Lattice-Mismatch-Induced Deep Level in In_xGa_AS_yP_ (0≦y≦0.41) Grown on (100) GaAs
- Measurement of Minority-Carrier Drift Velocity in Quantum Well Structures by Phololuminescence Intensity Correlation Method
- Characteristics and effectiveness of a foil lens for correction of spherical aberration in scanning transmission electron microscopy
- Determination of the Conduction Band Electron Effective Mass in Hexagonal GaN
- Concentration of Deep Level in InxGa1-xAsyP1-y Grown on (100) GaAs by LPE