Determination of the Conduction Band Electron Effective Mass in Hexagonal GaN

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概要

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• The electron effective mass in hexagonal GaN films grown by metal organic vapor phase epitaxy on sapphire substrates is determined by cyclotron resonance experiments. Its value is m^*_p=0.22±0.005 m.. Taking polaron effects into account the band edge mass is m^*_b=0.20±0.005 m.. From the resonance linewidth a mobility of 3500 cm^2/V・s at 6 K is obtained.

• 社団法人応用物理学会の論文
• 1995-09-15

著者

• Hofmann D.

  Technical University Munich Physikdepartment

• Akasaki I.

  Department Of Electrical And Electronic Engineeing Meijo University

• DRECHSLER M.

  Technical University Munich, Physikdepartment

• MEYER B.

  Technical University Munich, Physikdepartment

• DETCHPROHM T.

  Department of Electronics, School of Engineering, Nagoya University

• AMANO H.

  Department of Electrical and Electronic Engineeing, Meijo University

• Drechsler M.

  Technical University Munich Physikdepartment

• Detchprohm T.

  Department Of Electronics School Of Engineering Nagoya University

• Meyer B.

  Physikalisches Institut Justus-liebig-universitat Giessen

• Amano H

  Department Of Electrical And Electronic Engineeing Meijo University

• Meyer B.

  Technical University Munich Physikdepartment

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