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Department of Applied Electronics, Daido Institute of Technology | 論文
- Electron Beam Doping by Superdiffusion in Unirradiated Regions (X
- Spin Relaxation of Electrons in Graded Doping Strained GaAs-Layer Photocathode of Polarized Electron Source
- Different Growth Modes of Al on Si(111)7×7 and Si(111)√×√ -Al Surfaces
- Behaviors of Auger Intensities Emitted from a Si(111)〔ルート3〕×〔ルート3〕-Al Surface During Incident Beam Rocking of Reflection High-Energy Electron Diffraction
- Observation of Vicinal Si(111)7×7 Surface by Energy-Filtered Reflection High-Energy Electron Diffraction
- Correlation between the Relative Sensitivity Factors and the Sputtering Yields in Glow-Discharge Mass Spectrometry
- Development of Energy-Filtered Reflection High-Energy Electron Diffraction Apparatus
- Nonthermal Influence of Microwave Power on Chemical Reactions
- Typical Electron Beam Doping(Superdiffusion)of Impurity Atoms in Damage-Free Regions of Semiconductors by the Kick-Out Mechanism
- Surface Morphology of Growing Al on Si(111)7×7 and Si(111)√×√-Al Substrates by Reflection High-Energy Electron Diffraction
- Development of Highly Reliable Point Source Infrared Light-Emitting Diodes and Analysis Using a New Parameter of Dark Area Ratio
- High Spin Polarization of Conduction Band Electrons in GaAs-GaAsP Strained Layer Superlattice Fabricated as a Spin-Polarized Electron Source
- Crystalline Structure of Heteroepitaxial GaAs and GaAsP Layers Grown on GaAs Substrates Investigated by X-ray Diffraction: II. Strain in GaAsP Layer
- Crystalline Structure of Heteroepitaxial GaAs and GaAsP Layers Grown on GaAs Substrates Investigated by X-ray Diffraction: I. Mosaic Structure
- Evidence of Correlation between Dark Spots and Dislocations Originating from Substrate in Light-Emitting Diodes
- Quantitative Analysis of Strain in Silicon Crystals Using X-ray Pendellösung Oscillations