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Department Of Materials Science And Engineering National Chiao-tung University | 論文
- The Effect of Anodizing on the Corrosion Fatigue Behavior of 2024-T3 Aluminum Alloy
- Synthesis and Photoluminescent Properties of Wurtzite ZnS Nanorods by Hydrothermal and Co-precipitation Methods(Synthesis and Processing,Guest Editors Dedicated to Prof. Gunter Petzow: Modern Trends in Advanced Ceramics)
- Effect of CuO-based Oxide Additives on Bi_2O_3-ZnO-Nb_2O_5 Microwave Ceramics
- V-Band Flip-Chip Assembled Gain Block Using In_Ga_As Metamorphic High-Electron-Mobility Transistor Technology
- Influence of Rhenium on the Grain Boundary Strength, Phase Evolution, and High Temperature Mechanical Properties of a Fine-Grain Nickel-Base Superalloy at 982℃
- Effect of Postdeposition Annealing Temperatures on Electrical Characteristics of Molecular-Beam-Deposited HfO_2 on n-InAs/InGaAs Metal-Oxide-Semiconductor Capacitors
- InAs High Electron Mobility Transistors with Buried Gate for Ultralow-Power-Consumption Low-Noise Amplifier Application
- Microstructure and Properties of Pb Nanowires Fabricated by Casting
- Growth of High-Quality In_Ga_N Film on Si Substrate by Metal Organic Chemical Vapor Deposition
- Improving Electrical Properties and Thermal Stability of (Ba,Sr)TiO3 Thin Films on Cu(Mg) Bottom Electrodes
- Repairing of Etching-Induced Damage of High-$k$ Ba0.5Sr0.5TiO3 Thin Films by Oxygen Surface Plasma Treatment
- Threading Dislocation Blocking in Metamorphic InGaAs/GaAs for Growing High-Quality In_Ga_As and In_Ga_As on GaAs Substrate by Using Metal Organic Chemical Vapor Deposition
- Bias-Dependent Radio Frequency Performance for 40 nm InAs High-Electron-Mobility Transistor with a Cutoff Frequency Higher than 600 GHz
- Effect of Graded AlxGa1-xN Layers on the Properties of GaN Grown on Patterned Si Substrates
- Ti/Pt/Ti/Cu-Metallized Interconnects for GaN High-Electron-Mobility Transistors on Si Substrate
- Effect of CuO Doping in TiO Films on Device Performance of Dye-Sensitized Solar Cells (Special Issue : Photovoltaic Science and Engineering)
- Effect of Gate Length on Device Performances of AlSb/InAs High Electron Mobility Transistors Fabricated Using BCl3 Dry Etching
- AlGaAs/InGaAs High Electron Mobility Transistor Grown on Si Substrate with Ge/GexSi1-x Metamorphic Buffer Layers
- DC and RF Performance Improvement of 70 nm Quantum Well Field Effect Transistor by Narrowing Source–Drain Spacing Technology
- Composite-Channel Metamorphic High Electron Mobility Transistor for Low-Noise and High-Linearity Applications