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Department Of Electronics Engineering National Chiao-tung University | 論文
- MSD-First On-Line Arithmetic Progressive Processing Implementation for Motion Estimation
- A CMOS 33-mW 100-MHz 80-dB SFDR Sample-and-Hold Amplifier(Electronic Circuits)
- Microstructural Evolution of Friction Stir Processed Cast Mg-5.9mass%Y-2.6mass%Zn Alloy in High Temperature Deformation
- Base Model Transmission for 3D Graphics in a Network Environment
- A Novel Delta-Sigma Time-to-Digital Converter Using Delay Line
- Anomalous Behaviors of Random Telegraph Signals in Ultra-thin Gate Oxide MOSFETs
- Floating Body Accelerated Oxide Breakdown Progression in Ultra-Thin Oxide SOI pMOSFETs
- IS-31 Giant Leiomyoma of the Uterus : Report of a Case and Review of the Literature
- A Novel Sphere-Based Statistical Model for "Local Oxide Thinning" Induced Gate Oxide Breakdown
- Improvement of Ultra-Thin 3.3nm Thick Oxide for Co-Salicide Process Using NF3 Annealed Poly-Si Gate
- Reproducing Subthreshold Characteristics of Metal–Oxide–Semiconductor Field Effect Transistors under Shallow Trench Isolation Mechanical Stress Using a Stress-Dependent Diffusion Model
- Red blood cell substitutes : past, present and future
- Physical and Barrier Properties of Plasma-Enhanced Chemical Vapor Deposited $\alpha$-SiC:H Films from Trimethylsilane and Tetramethylsilane
- Physical and Barrier Properties of Plasma-Enhanced Chemical Vapor Deposited $\alpha$-SiCN:H Films with Different Hydrogen Contents
- Thermal Stability of Cu/NiSi-Contacted p+n Shallow Junction
- Effects of O2- and N2-Plasma Treatments on Copper Surface
- Physical and Barrier Properties of Plasma Enhanced Chemical Vapor Deposition $\alpha$-SiC:N:H Films
- Formation of NiSi-Silicided p+n Shallow Junctions by BF2+ Implantation into/through Silicide and Rapid Thermal Annealing
- Formation and Characterization of NiSi-Silicided n+p Shallow Junctions