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Department Of Electronic Engineering Feng-chia University | 論文

• A Novel Power MOSFET Structure with Shallow Junction Dual Well Design(Compound Semiconductor and Power Devices,Fundamentals and Applications of Advanced Semiconductor Devices)
• High Current, High Power, and High Linearity Ohmic Recess InGaP/InGaAs Doped Channel FETs(Session 7B Compound Semiconductor Devices III,AWAD2006)
• High Current, High Power, and High Linearity Ohmic Recess InGaP/InGaAs Doped Channel FETs(Session 7B Compound Semiconductor Devices III)
• High Current, High Power, and High Linearity Ohmic Recess InGaP/InGaAs Doped Channel FETs
• High Performance Power MOSFETs by Wing-Cell Structure Design(Si Devices and Processes,Fundamental and Application of Advanced Semiconductor Devices)
• High Performance Power MOSFETs by Wing-cell Structure Design (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
• High Performance Power MOSFETs by Wing-cell Structure Design (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
• Device Linearity and Gate Voltage Swing Improvement by Al_Ga_As/In_Ga_As Double Doped-Channel Design (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
• High Ruggedness Power MOSFET Design by a Self-Align p^+ Process(Power Devices, Fundamental and Application of Advanced Semiconductor Devices)
• A Novel High Ruggedness Power MOSFET With a Planar Oxide Deep P+ Implant Structure
• InGaP/InGaAs DCFETs with Drain and Source Recess Process
• High Ruggedness Power MOSFET Design by a Self-Align P+ Process(Session A7 High Power Devices)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
• Boron Penetration study of P channel Power MOSFET for Low Gate Driving Application(Session B5 Si-Devices I)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
• High Ruggedness Power MOSFET Design by a Self-Align P+ Process(Session A7 High Power Devices)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
• Boron Penetration study of P channel Power MOSFET for Low Gate Driving Application(Session B5 Si-Devices I)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
• Boron Penetration study of P channel Power MOSFET for Low Gate Driving Application
• A Novel Power MOSFET Structure with Split P-well and Split Poly Design
• A Novel Power MOSFET Structure with Split P-well and Split Poly Design
• Alternative Method of Wavelength Drift Free Dual-Wavelength Heterodyne Interferometry for the Absolute Distance Measurement
• The Analysis of the Floating Field Limiting Ring and Field Plate(Session6: Power Devices)

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