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Department Of Electronic Engineering Feng-chia University | 論文
- Improvement of the Leakage by Second Thermal Oxidation Process Power Trench Gate MOSFET(Session6: Power Devices)
- The Analysis of the Floating Field Limiting Ring and Field Plate(Session6: Power Devices)
- Improvement of the Leakage by Second Thermal Oxidation Process Power Trench Gate MOSFET(Session6: Power Devices)
- Low gate leakage current HEMTs by a new airbridge gate and a liquid oxidization surface (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Low gate leakage current HEMTs by a new airbridge gate and a liquid oxidization surface (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Impacts of Cu/TaN Electrode on the Electrical Properties of Metal-insulator-metal (Ba,Sr)TiO_3 Thin-film Capacitors
- The Study of Drain Alloy Time and Temperature for Antimony Substrate Vertical High Voltage Power MOSFETs(Session 6B Power Devices,AWAD2006)
- The Study of Drain Alloy Time and Temperature for Antimony Substrate Vertical High Voltage Power MOSFETs(Session 6B Power Devices,AWAD2006)
- The Occurrence of Superconductivity in the TlBa_2CuO_-Type (1021) System
- Improving Characteristics of Tantalum Oxide Thin Film Devices with Copper Electrodes
- Evolution of Magnetotransport Properties and Spin-Glass Behavior of the La_Nd_xPb_MnO_3 System : Magnetism
- Effect of Nitrogen Plasma Treatment on Electrical Characteristics for Pd Nanocrystals in Nonvolatile Memory
- High performance bottom-gated poly-Si thin film transistors employing novel extended metal-pad (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- High performance bottom-gated poly-Si thin film transistors employing novel extended metal-pad (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Low switching loss power MOSFET with dual gate structure (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Low switching loss power MOSFET with dual gate structure (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- COMPARISON OF FIELD MAPS GENERATED BY PHASE LABELING USING SENSE (PLUS)
- Effect of Thermal Annealing or Plasma Treatment on Analog Characteristics for High-$k$ Material Capacitors