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Corporate Manufacturing Engineering Center, Toshiba Corporation | 論文
- Tight-Binding Quantum Chemical Calculations of Electronic Structures of Indium Tin Oxide
- Effect of CHF_3 Addition on Reactive Ion Etching of Aluminum Using Inductively Coupled Plasma
- A Highly Selective Photoresist Ashing Process for Silicon Nitride Films by Addition of Trifluoromethane : Semiconductors
- Photoresist Ashing Process Using Carbon Tetrafluoride Gas Plasma with Ammonia Gas Addition
- A Theoretical Study on the Realistic Low Concentration Doping in Silicon Semiconductors by Accelerated Quantum Chemical Molecular Dynamics Method
- Quantum Chemical Molecular Dynamics Simulation of the Plasma Etching Processes
- High-Speed Rotating-Disk Chemical Vapor Deposition Process for In-Situ Arsenic-Doped Polycrystalline Silicon Films
- Newly Developed High-Speed Rotating Disk Chemical Vapor Deposition Equipment for Poly-Si Films
- New Inductively Coupled Plasma System Using Divided Antenna for Photoresist Ashing
- Dramatic Improvement of Surface Wave Plasma Performance Using a Corrugated Dielectric Plate : Nuclear Science, Plasmas, and Electric Discharges
- Dry Etching Characteristics of Si-based Materials Using CF_4/O_2 Atmospheric-Pressure Glow Discharge Plasma
- Formation of Ammonium Salts and Their Effects on Controlling Pattern Geometry in the Reactive Ion Etching Process for Fabricating Aluminum Wiring and Polysilicon Gate
- Photoabsorption of Synthetic Silica Glass under ArF Excimer Laser Irradiation : Optical Properties of Condensed Matter
- Estimation of the Life of Synthetic Silica Glass under Long Time Irradiation by ArF Excimer Laser
- Ferroelectric Properties of Pb(Zi, Ti)O_3 Capacitor with Thin SrRuO_3 Films within Both Electrodes
- Microtrench Generation in SiO_2 Trench Etching for Damascene Interconnection Process
- Oxygen Plasma Damage in GaAs Directly Exposed to Surface-Wave Plasma
- Evaluation of Oxygen-Plasma Damage in GaAs Exposed to a Surface-Wave Plasma Source Developed for the Ashing Process : Nuclear Science, Plasmas, and Electric Discharges
- Dry Etching of Cr_2O_3/Cr Stacked Film during Resist Ashing by Oxygen Plasma
- Small Size Quasi-millimeter Wave Transceiver with all SMT Parts (移動通信ワークショップ--次世代ブロードバンド無線通信の実現に向けて)