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Central Research Laboratory, Hitachi Ltd. | 論文
- Three-Dimensional Tracking Method of Tissue Motion with Biplane Images
- Beryllium Single Crystal Flakes as Substrates for High Resolution Electron Microscopy
- In-line Optical Lever System for Ultrasmall Cantilever Displacement Detection
- Nanometer Recording on Graphite and Si Substrate Using an Atomic Force Microscope in Air
- A Magnetic Force Microscope Using an Optical Lever Sensor and Its Application to Longitudinal Recording Media
- Low-Power and High-Speed Advantages of DRAM-Logic Integration for Multimedia Systems (Special Issue on Low-Power and High-Speed LSI Technologies)
- Significance of Charge Sharing in Causing Threshold Voltage Roll-Off in Highly Doped 0.1-μm Si Metal Oxide Semiconductor Field Effect Transistors and its Suppression by Atomic Layer Doping
- Controlled Atomic Layer Doping and ALD MOSFET Fabrication in Si
- DIGITAL MAMMOGRAPHY WITH SYNCHROTRON RADIATION
- A Note on the Composition of GaAs_P_x Grown in the GaAs-AsCl_3-PCl_3-H_2 System
- Growth of Gallium Arsenide Single Crystal from Liquid Phase on Seed Crystal
- Phase Transition in SnTe with Low Carrier Concentration
- Detection of SiO_2-Ions from SiO_2-Si Interface by Means of SIMS
- Growth Behavior and Mechanism of Alkyl-Desorption-Limited Epitaxial Growth of GaAs on Exactly Oriented and Vicinal Substrates
- Mechanism of Multiatomic Step Formation durirng Metalorganic Chemical Vapor deposition Growth of GaAs on (001) Vicinal Surface Studied by Atomic Force Microscopy
- Preparation of a-Si_N_x:H Film Using N_2 Microwave Afterglow Chemical Vapor Deposition Method
- Generation Mechanism of Tensile Stress in a-Si_N_x Films Prepared by Afterglow Plasma Chemical Vapor Deposition Technique
- Residual Stress of a-Si_N_x:H Films Prepared by Afterglow Plasma Chemical Vapor Deposition Technique
- Dry Etching Damage and Activation Ratio Degradation in δ-Doped AlGaAs/InGaAs High Electron Mobility Transistors
- Morphological Evolution of the InGaN-Based Quantum Well Surface due to a Reduced Density of Threading Dislocations in the Underlying GaN through Higher Growth Pressure