スポンサーリンク
Central Research Laboratory, Hitachi Ltd. | 論文
- Optical Properties of GaN Thin Films on Sapphire Substrates Characterized by Variable-Angle Spectroscopic Ellipsometry
- Increased Size of Open Hexagonally Shaped Pits due to Growth Interruption and Its Influence on InGaN/GaN Quantum-Well Structures Grown by Metalorganic Vapor Phase Epitaxy
- A BiCMOS Seventh-Order Lowpass Channel-Select Filter Operating at 2.5V Supply for a Spread-Spectrum Wireless Receiver(Special Section on Analog Circuit Techniques and Related Topics)
- AORTOGRAPHIC CORONARY ANGIOGRAPHY WITH SYNCHROTRON RADIATION. ; CORONARY STENOSIS MODEL
- Electroluminescence from Strained SiGe/Si Quantum Well Structures Grown by Solid Source Si Molecular Beam Epitaxy
- ISOLATION OF AN EXTENSIN GENE (atExt2) AND ANALYSIS OF ITS FAMILY IN ARABIDOPSIS THALIANA
- Abnormal auditory neural networks in patients with right hemispheric infarction, chronic dizziness, and moyamoya disease : a magnetoencephalogram study
- Switching of Single Hexagonal Particles with Nonuniform Magnetic Properties
- Effect of Damping Constant on Switching of Hexagonal Platelet Particle
- Micromagnetic Computation of Damping Constant Effect on Switching Mechanism of a Hexagonal Platelet Particle
- Computer Simulation of Magnetization Reversal Mechanisms of Hexagonal Platelet Particle : Effect of Material Parameters
- Micromagnetic Calculation of Applied Field Effect on Switching Mechanism of a Hexagonal Platelet Particle
- Adaptive Circuits for the 0.5-V Nanoscale CMOS Era
- Hall Effect Studies on Ar and Xe Sputtered Pt/Co Multilayer Films : Media
- Hall Effect Studies on Ar and Xe Sputtered Pt/Co Multilayer Films
- A 126mm^2 4-Gb Multilevel AG-AND Flash Memory with Inversion-Layer-Bit-Line Technology(Integrated Electronics)
- D-12-38 Frequency Plan for GSM/DCS1800 Dual-band Direct-conversion Radio
- Influence of Oxygen upon Radiation Durability of SiN X-Ray Mask Membranes : Lithography Technology
- Influence of Oxygen upon Radiation Durability of SiN X-ray Mask Membranes
- Highly Precise Atomic Force Microscope Measurement of High-Aspect Nanostructure Free of Probe Bending Error