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Central Research Institute Mitsubishi Materials Corporation | 論文
- Energy Shifts of Auger Transitions of Ga, As and N during Plasma-assisted Nitridation of GaAs (001) Surface
- Fabrication of Diamond Membranes for X-Ray Masks by Hot-Filament Method
- Detection of Bulk Microdefects underneath the Surface of Si Wafer Using Infrared Light Scattering Tomography
- Change of Structure and Electrical Properties of FeSi_2 Thin Film during Annealing
- Effects of Some Additives on Thermoelectric Properties of FeSi_2 Thin Films
- The Composition Dependence of Some Electrical Properties of FeSi_x Thin Films
- Quantification of Sulfur in Copper by Secondary Ion Mass Spectrometry(SIMS)
- Direct Temperature Measurement of Melts in Continuous Copper Converter with Expendable Immersion Optical Fiber Thermometer
- Scanning Transmission Electron Microscopy and Electron Energy Loss Spectroscopy at 1,000kV
- Annealing Behavior of a Light Scattering Tomography Detecting Defect near the Surface of Si Wafers
- Composition Dependence of Some Electrical Properties of Fe_M_ySi_x (M=Cr, Co) Thin Films
- Molecular Beam Epitaxy of Highly [100]-Oriented $\beta$-FeSi2 Films on Lattice-Matched Strained-Si(001) Surface Using Si0.7Ge0.3 Layers
- Calculation of Diffusion Component of Leakage Currentin pn Junctions Formed in Various Types of Silicon Wafers (Intrinsic Gettering, Epitaxial, Silicon on Insulator)
- Cell Proliferation, Corrosion Resistance and Mechanical Properties of Novel Titanium Foam with Sheet Shape
- Properties of Diamond Compacts Having Different Grain Sizes with MgCO_3 Sintering Agent
- Nondestructive Analysis of Crystal Defects in 4H-SiC Epilayer by Devised Electron-Beam-Induced Current Method