Effects of Some Additives on Thermoelectric Properties of FeSi_2 Thin Films

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概要

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• Effects of some additives (V, Cr, Mn, Co, Ni, Pd, Pt) on thermoelectric properties of FeSi_2 thin films were studied. V, Cr or Mn-doped FeSi_2 films were of p-type semiconductor and Co, Ni, Pd and Pt-doped FeSi_2 films of n-type semiconductor. It was indicated that V or Cr are more suitable additives in thermoelectric properties of p-type FeSi_2 than Mn and that Pt is superior to other additives in thermoelectric properties of n-type FeSi_2.

• 社団法人応用物理学会の論文
• 1991-02-15

著者

• Ido S

  Faculty Of Engineering Saitama University

• Ido Shunji

  Department Of Electrical Engineeing Faculty Of Engineering Saitama University

• KOMABAYASHI Masashi

  Central Research Institute, Mitsubishi Material Corporation

• HIJIKATA Ken-ichi

  Central Research Institute, Mitsubishi Material Corporation

• Komabayashi M

  Mitsubishi Materials Corp. Omiya

• Hijikata Kenichi

  Mitsubishi Material Corporation Central Research Institute

• Komabayashi Masashi

  Central Research Institute Mitsubishi Materials Corporation

関連論文

• Magnetic Field Analyses by Using Free Mesh Method and Their Visualization
• Computational Studies on Plasma Generation and Erosion in a Rectangular Magnetron Sputtering System
• Change of Structure and Electrical Properties of FeSi_2 Thin Film during Annealing
• Effects of Some Additives on Thermoelectric Properties of FeSi_2 Thin Films
• The Composition Dependence of Some Electrical Properties of FeSi_x Thin Films
• Particle Orbit Simulations on Ion Loss at the Edge of a Tokamak with Separatrix Configuration
• Composition Dependence of Some Electrical Properties of Fe_M_ySi_x (M=Cr, Co) Thin Films
• Measurements of Plasma Controlled by Compressed Magnetic Field Magnetron Sputtering Technique
• Simulations of Electron Orbits in a Bucket-Type Ion Source
• Computational Studies on the Shape and Control of Plasmas in Magnetron Sputtering Systems

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