Change of Structure and Electrical Properties of FeSi_2 Thin Film during Annealing

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概要

• 論文の詳細を見る

• Changes of structure and electrical properties of FeSi_2 thin film by annealing at 380-600℃ were studied and the crystallization process of the film was discussed. As a result of annealing, transformation from an amorphous phase to FeSi_2 crystal occurred at 380-420℃. FeSi_2 crystalline in the film was imperfect and the number of defects decreased with increasing annealing temperature. The electrical resistivity, Seebeck coefficient and activation energy associated with acceptor levels increased with increasing annealing temperature throughout the temperature region. These changes in the electrical properties by annealing were explained by the decrease in the number of defects on annealing. Carrier mobilities in the annealed films at various temperatures were deduced from the results of activation energy measurement.

• 社団法人応用物理学会の論文
• 1991-03-15

著者

• Ido S

  Faculty Of Engineering Saitama University

• Ido Shunji

  Department Of Electrical Engineeing Faculty Of Engineering Saitama University

• KOMABAYASHI Masashi

  Central Research Institute, Mitsubishi Material Corporation

• HIJIKATA Ken-ichi

  Central Research Institute, Mitsubishi Material Corporation

• Komabayashi M

  Mitsubishi Materials Corp. Omiya

• Hijikata Kenichi

  Mitsubishi Material Corporation Central Research Institute

• Komabayashi Masashi

  Central Research Institute Mitsubishi Materials Corporation

関連論文

• Magnetic Field Analyses by Using Free Mesh Method and Their Visualization
• Computational Studies on Plasma Generation and Erosion in a Rectangular Magnetron Sputtering System
• Change of Structure and Electrical Properties of FeSi_2 Thin Film during Annealing
• Effects of Some Additives on Thermoelectric Properties of FeSi_2 Thin Films
• The Composition Dependence of Some Electrical Properties of FeSi_x Thin Films
• Particle Orbit Simulations on Ion Loss at the Edge of a Tokamak with Separatrix Configuration
• Composition Dependence of Some Electrical Properties of Fe_M_ySi_x (M=Cr, Co) Thin Films
• Measurements of Plasma Controlled by Compressed Magnetic Field Magnetron Sputtering Technique
• Simulations of Electron Orbits in a Bucket-Type Ion Source
• Computational Studies on the Shape and Control of Plasmas in Magnetron Sputtering Systems

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