The Composition Dependence of Some Electrical Properties of FeSi_x Thin Films

概要

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The composition dependence of the Seebeck coefficients and the microstructures of FeSi_x thin films were studied. In the region of x<2.06, the Seebeck coefficients and amounts of the FeSi_2 phase increase with increasing x. The results of electrical resistivity measurements and the analysis of the constituent phases indicate that there are two forms of the FeSi phase. In one form, the FeSi phase exists continuously along the grain boundary of the FeSi_2 phase and in the other, it is surrounded by FeSi_2. In the region of x>2.08, the Seebeck coefficient is negative. From the results of the d-spacing measurements, it is inferred that the excess Si in the sample with x>2.08 induces structural defects in the FeSi_2, which provides the donor.
社団法人応用物理学会の論文
1990-06-20