Composition Dependence of Some Electrical Properties of Fe_<1-y>M_ySi_x (M=Cr, Co) Thin Films

概要

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The composition dependence of the Seebeck coefficient, electrical resistivity and activation energy associated with acceptor or donor levels of Fe_<1-y>M_ySi_x (M=Cr, Co) thin films obtained by rf sputtering were examined. The activation energy associated with defect levels in undoped films were strongly dependent on the composition (x). For Cr-doped or Co-doped films, the activation energy was smaller than that of a undoped film and insensible to x when the impurity density was sufficiently high. It follows that the variation of the defect levels did not influence the activation energy when the impurity levels were shallower than the defect levels. Accordingly, the Seebeck coefficient and electrical resistivity for Cr-doped and Co-doped films are insensible to the composition (x), although they were influenced by the defect density when the electrical polarity of defects and impurities was different.
社団法人応用物理学会の論文
1991-11-15